Grain-boundary-limited transport in semiconducting SnO2 thin films: Model and experiments

Prins, Mwj Menno; Grosse-Holz, K-O; Cillessen, J. F. M.; Feiner, LF Lou

doi:10.1063/1.366773

Cited by 75 publications

(61 citation statements)

References 15 publications

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“…On the other hand, several authors [4][5][6] have studied the transport mobility by taking into account the grain boundary scattering for nondegenerate and degenerate 7 semiconductors based on Seto's model 8 wherein a depletion layer exists at the boundaries. CdO, having donor-type surface states and an accumulation layer 9 at the grain boundaries, cannot be analyzed by the aforementioned methods.…”

Section: Introductionmentioning

confidence: 99%

Electron mobility in CdO films

Farahani

Veal

King

et al. 2011

Journal of Applied Physics

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Electron mobility in degenerate CdO thin films has been studied as a function of carrier concentration. The "optical" mobility has been determined from infrared reflectance measurements of the conduction band plasmon lifetime. The acquired values vary from $209 to $1116 cm 2 V À1 s À1 for carrier concentrations between 2:5Â10 20 and 2:6 Â 10 19 cm À3 . Ionized impurity scattering is shown to be the dominant effect reducing the intra-grain mobility of the electrons at room temperature. The transport mobilities from Hall effect measurements range between $20 and $124 cm 2 V À1 s À1 which are much lower than the optical mobilities. Simulation of grain boundary scattering-limited mobility is commonly based on models that assume a depletion layer at the boundaries which causes an inter-grain potential barrier. These models are found not to be applicable to CdO as it has been previously shown to have surface electron accumulation. Therefore, simulation of the transport mobility has been performed using the Fuchs-Sondheimer and Mayadas-Shatzkes models to take into account the grain boundary and surface scattering mechanisms, in addition to intra-grain scattering. The results indicate that electron scattering at grain boundaries with $95 % reflection is the dominant mechanism in reducing the mobility across the layer. The effect of surface scattering plays only a minor role in electron transport.

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Section: Introductionmentioning

confidence: 99%

Electron mobility in CdO films

Farahani

Veal

King

et al. 2011

Journal of Applied Physics

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“…In Ref. [11], the corresponding term 3 4 w is found (by fitting to data) to decrease instead; a more detailed analysis appears to be necessary for an explanation of this discrepancy.…”

Section: B Degenerate Case: Single Barriermentioning

confidence: 96%

“…In many cases of physical relevance, however, the mean free path is neither large nor small compared with the characteristic dimensions of the sample. Thus, formulas for the current-voltage characteristic have appeared in the literature which combine features of the two limiting types of transport mechanism for particular conduction band edge profiles, e.g., for a single barrier [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Generalized Drude model: unification of ballistic and diffusive electron transport

Lipperheide

Weis

Wille

2001

J. Phys.: Condens. Matter

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For electron transport in parallel-plane semiconducting structures, a model is developed that unifies ballistic and diffusive transport and thus generalizes the Drude model. The unified model is valid for arbitrary magnitude of the mean free path and arbitrary shape of the conduction band edge profile. Universal formulas are obtained for the current-voltage characteristic in the nondegenerate case and for the zero-bias conductance in the degenerate case, which describe in a transparent manner the interplay of ballistic and diffusive transport. The semiclassical approach is adopted, but quantum corrections allowing for tunneling are included. Examples are considered, in particular the case of chains of grains in polycrystalline or microcrystalline semiconductors with grain size comparable to, or smaller than, the mean free path. Substantial deviations of the results of the unified model from those of the ballistic thermionic-emission model and of the drift-diffusion model are found. The formulation of the model is one-dimensional, but it is argued that its results should not differ substantially from those of a fully three-dimensional treatment. PACS number(s): 05.60.Cd,

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“…Parameter q 0 ensures charge neutrality for zero gatevoltage. Since we are using a degenerately doped semiconductor material 19 we choose q 0 such that the Fermi level lines up with the conduction band edge at ⌽ϭ0. We assumed that the influence of the source-drain voltage on the band bending is negligible, so that we can approximate the sourcedrain conductivity ͑ ͒ by counting the electrons in states above the conduction band edge (n cond ) and calculating (x)ϭn cond (x)ϫeϫ ͓see Fig. 8͑b͔͒…”

Section: B Ferroelectric Transistormentioning

confidence: 99%

“…The slope of the G -Q curve in the highconductivity ͑or accumulation͒ regime determines the electron mobility in the semiconducting channel; the deduced value ͑1.3ϫ10 Ϫ4 m 2 /Vs) is in agreement with measurements of the Hall mobility in the same material. 19 The slope of the G -Q curve at low conductivity ͑depletion or subthreshold regime͒ is given by the density of grain states D gr and the effective semiconductor layer thickness t eff . These parameters cannot be deduced independently from the measured curve.…”

Section: Fig 9 Asmentioning

confidence: 99%

Equivalent-circuit modeling of ferroelectric switching devices

Rep

Prins

1999

Journal of Applied Physics

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A compact equivalent-circuit model for ferroelectric switching devices is derived from a general model for local charge displacements. The general model consists of a matrix of repeat units describing local dissipationless charge displacements ͑electrostatic channel͒, as well as dissipative charge displacements ͑electrochemical channel͒, the channels being coupled due to the electrical charge of the moving species. The derived model for ferroelectric charge displacements is used to simulate both hysteresis and transient characteristics, and applied to two devices: ͑i͒ a ferroelectric capacitor and ͑ii͒ a ferroelectric memory field-effect transistor. The circuits are programmed in SPICE-derived analysis software. We find that experimental hysteresis data obtained on Pb͑Zr,Ti͒O 3 ceramic capacitors and on thin-film transistors with a SnO 2 :Sb semiconductor and a Pb͑Zr,Ti͒O 3 ferroelectric insulator can be reproduced and interpreted with the equivalent-circuit models.

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Grain-boundary-limited transport in semiconducting SnO2 thin films: Model and experiments

Cited by 75 publications

References 15 publications

Electron mobility in CdO films

Electron mobility in CdO films

Generalized Drude model: unification of ballistic and diffusive electron transport

Equivalent-circuit modeling of ferroelectric switching devices

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