Grain boundary scattering in ruthenium dioxide thin films

MOCVD of Thin Ruthenium Oxide Films: Properties and Growth Kinetics

“…At thicknesses above 100 nm, there is no further decrease in r. This behavior can be explained by percolation. Grain boundary scattering, the most critical mechanism in polycrystalline samples, [8] is the origin of the elevated resistivity in the films compared to the bulk value (35.2 mW cm). [15] Also the residual resistivity ratios (RRR) of 1.45±1.65 indicate a higher grain boundary scattering in our films compared to bulk single crystals [15] (RRR = 20±800).…”

“…[4] Furthermore, RuO 2 is frequently used as an electrocatalyst in chlorine production, [5] and has been proposed as a catalyst for the photodecomposition of water. [6] So far most reported RuO 2 films have been prepared by radio frequency (RF) reactive sputtering, [1,7,8] whereas comparatively little has been published on MOCVD. Carbonyl and b-diketonate complexes of ruthenium were generally used as precursors.…”

Noise and structural properties of reactively sputtered RuO2 thin films

“…The other types of scattering, related to defects, grain boundaries, surface and RuO 2 /SiO 2 interface, suppress the 1 / f noise. The grain boundary scattering is an important electron scattering mechanism in the RuO 2 thin film [14]. This scattering mechanism causes a suppression of the 1 / f noise related to the phonon scattering fluctuations.…”

“…These properties of RuO 2 films have been widely studied [2,3,7,10 -12]. The electrical transport properties and electron scattering mechanisms in these films have been investigated also [13,14]. However, the noise properties of RuO 2 thin films, and the relationship between noise and structural and the other electrical properties of the films have not been studied sufficiently.…”

Deposition of Conductive Ru and RuO2 Thin Films Employing a Pyrazolate Complex [Ru(CO)3(3,5‐(CF3)2‐pz)]2 as the CVD Source Reagent

“…[28] Finally, the room temperature resistivity is found to decrease from 200 lX cm to 70 lX cm as the deposition temperature of the RuO 2 thin film increased from 300 C to 450 C. Since the effect of the deposition temperature on the reduction of the grain boundary is obviously detected in the SEM images, there is no doubt that the resistivity of polycrystalline RuO 2 films is mainly affected by electron scattering at the grain boundary. [29] 3. Summary…”