Grain size-dependent electrical resistivity of bulk nanocrystalline Gd metals

Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties

“…6 (c) shows the typical I-V characteristics of AlN films (whose thicknesses are all approximately 700 nm) measured at room temperature with the applied voltage from -10 V to 10 V. The leakage current density of AlN-0 at 5 V bias voltage is about M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT 12 1×10 -6 A/cm 2 , which is one order of magnitude higher than that of the AlN-1.0 (>1×10 -7 A/cm 2 ) measured under the same condition. The result indicates that the additional magnetic field can improve the insulating property of AlN films, and this must be related to the improvement in the quality of the films in UBMS [1,[30][31][32].…”

“…6 (a) Moreover, the dielectric constant of the AlN-1.0 remains relatively stable with the increase of frequency, while the AlN-0 exhibits sharp decline. Some researches showed that large grain sizes, low surface roughness, compact and uniform structures are associated with large dielectric constants [30][31][32]. Other researches indicated that the dielectric constant is dependent strongly on the orientation [33][34][35] and for AlN films, the dielectric constant along the c-axis is larger than that in the M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT 11 basal plane [36], therefore, the films with highly preferred orientation along the c-axis have larger dielectric constants than those with random orientations.…”

Influence of sputtering atmosphere on crystal quality and electrical properties of zirconium aluminum nitride thin film

“…In our case, we assume that µ=1, that large grain sizes, low surface roughness, compact and uniform structures are associated with large dielectric constants [14,15]. Other studies indicated that the dielectric constant is strongly dependent on orientation for AlN films where the dielectric constant along the c-axis is larger than that in the basal plane [16].…”

The electrical properties of nanocrystalline Cu-Al2O3

“…It changed from 95 nm for 1 vol.% Al 2 O 3 to 73 nm for material with 5 vol.% Al 2 O 3 , Table 1. Consequently, a high contribution to the electrical resistivity from the grain/crystallite boundaries can be assumed [15]. The presence of the Cu grain/crystallite boundaries increases the electrical resistivity according to the following relation [16]:…”