Influence of sputtering atmosphere on crystal quality and electrical properties of zirconium aluminum nitride thin film

Ke, Genshui; Yuan, Tao; He, Zhenni; Guo, Haibo; Chen, Yigang; DiBattista, Jim; Chan, Eason; Yang, Yu

doi:10.1016/j.surfcoat.2015.09.046

Cited by 7 publications

(1 citation statement)

References 17 publications

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“…There are two common targets used: Al target and AlN target [20][21][22][23]. Much work so far has indicated that the preparation of AlN films based on Al target hardly ensure an exact composition ratio of films [24][25][26]. Some researchers obtained AlN films using AlN target, which had solved the problem of element composition ratio [27].…”

Section: Introductionmentioning

confidence: 99%

Defect regulation of AlN films based on Al-rich AlN targets

Wen¹,

Shen²,

Sun³

et al. 2022

Semicond. Sci. Technol.

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Aluminum nitride (AlN) films with low defect concentration were fabricated on Si substrates via RF magnetron sputtering system based on Al-rich AlN (Al-AlN) targets. The effects of Al-rich content on structure, defects and photoelectric properties of AlN films were investigated by x-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), ultraviolet-visible (UV-vis) spectra, current-voltage (I-V) and capacitance-voltage (C-V) characteristics. In particular, the defects of AlN films were investigated by XPS and low-temperature PL analyses, indicating that Al-rich AlN targets can help to reduce the defects of Al vacancy and O impurity of AlN films with an optimal Al-rich content of 1.5 wt. % (A1.5). Schottky contact behavior between AlN films and Ti/Al/Ni/Au multi-layer electrodes were revealed from I-V curves of all samples based on parallel electrodes, and AlN MSM devices prepared by A1.5 films exhibited the lowest leakage current of 2.43×10-8 A at the bias of 5 V. C-V tests indicate the less defect density and lower carrier concentrations of vertical structure of A1.5 devices. This work offers a feasible approach to regulate the defects of AlN films for practical application.

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Section: Introductionmentioning

confidence: 99%

Defect regulation of AlN films based on Al-rich AlN targets

Wen¹,

Shen²,

Sun³

et al. 2022

Semicond. Sci. Technol.

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Structural, morphological, compositional and optical studies of plasma polymerized 2-furaldehyde amorphous thin films

Kabir

Rahman

Uddin

et al. 2017

Applied Surface Science

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Thickness, t ± 5 (nm) Highlights  Plasma polymerized 2-furaldehyde thin films of different thicknesses were deposited onto glass substrate in optimum conditions by glow discharge reactor.  XRD results confirmed the amorphous nature of the films.  The as-deposited PPFDH thin films contain asymmetric C-H and C≡C stretching bonds due to plasma polymerization.  The direct and indirect optical band gaps of the PPFDH thin films of different thicknesses were found to be 3.40-3.45 and 2.10-2.45 eV, respectively.  The dispersion energy increases from 6.35 to 18.85 eV while oscillator energy decreases from 3.17 to 2.83 eV with increasing thickness of the thin films.

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