Grain size effects on thermoelectric properties of hot-pressed CoSb/sub 3/

The sintering and grain growth behaviour of ceramic–carbon nanotube nanocomposites

“…A coarse-grained microstructure is desired for applications requiring higher modulus [59], higher creep resistance [52], higher thermoelectric properties (Hall mobility and figure of merit) [60], higher thermal conductivity [60], higher electrical conductivity [60,61] and higher optical transparency [52]. On the other hand, a very fine-grained microstructure is desired for applications requiring higher strength [52], higher wear resistance [62], higher thermal shock resistance [63], higher cyclic fatigue resistance [52,64], low dielectric loss [52] and higher optical transparency [52].…”

Effects of Sb compensation on microstructure, thermoelectric properties and point defect of CoSb3compound

“…Anno et al [8] fabricated polycrystalline p-type CoSb 3 from Sb-rich powder mixture (Co : Sb = 1 : 3.2) by using a solid reaction method combined with hot pressing to consolidate samples and to remove excess Sb. Using the stochiometric powder mixture as starting materials, Kawaharada's group [9], Wojciechowski's group [10] and Kuznetsov's group [11] obtained n-type CoSb 3 by using the similar process, while Nakagawa's group [12], Zhou's group [13] and Puyet's group [14] obtained p-type CoSb 3 . A possible reason for the different types of CoSb 3 obtained by different authors was attributed to the different residual impurities such as Ni and Cr in the starting materials.…”

Synergistic Optimization of Electronic and Thermal Transport Properties for Achieving High ZT in Ni and Te Co-substituted CoSb3

“…Various research groups explored and worked for the better TE properties of pristine CoSb 3 . ,,, Efforts have been made to improve the TE properties of CoSb 3 by utilizing different strategies such as substitutional doping, − void-filling, ,− secondary phase inclusion, and nanostructuring. , Among these strategies, void-filling has emerged out as a promising technique to improve TE performance. But costly rare earth elements are used as “fillers”, achieving high ZT requires multiple fillings of rare earth elements, ,, and their synthesis involves multiple complex steps, which is a bottleneck for their practical applications. ,, On the other hand, doping CoSb 3 has received considerable attention, especially during the past decade, as the dopants used are mostly transition elements and semiconductors which are relatively less expensive and easy to process .…”