Grain Size Engineering of Ferroelectric Zr-doped HfO<sub>2</sub>for the Highly Scaled Devices Applications

Liao, Jiajia; Zeng, Binjian; Sun, Qi; Chen, Qiang; Liao, Min; Qiu, Chenguang; Zhang, Zhiyong; Zhou, Yue

doi:10.1109/led.2019.2944491

Cited by 55 publications

(30 citation statements)

References 20 publications

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“…The dielectric/electrode interfacial regions can form during the ALD and post annealing processes as indicated on Figure . Two pancake-like grains (G 1 and G 2 ) with long horizontal diameters (>10 nm) are detected in Figure based on the approach applied by Liao et al . As is seen, grains are elongated along the W electrodes, indicating the fact that, due to the short annealing time (30 s), most of the distortion imposed by the nanolaminate structure is not recovered during the annealing process.…”

Section: Resultsmentioning

confidence: 96%

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Kashir

Farahani

Kamba

et al. 2021

ACS Appl. Electron. Mater.

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Engineering of HfO 2 −ZrO 2 ferroelectric thin films can substantially increase their dielectric constant. Here, we investigate dielectric and structural properties of ∼10 nm thin films consisting of stacked 1 nm thin ferroelectric (FE) Hf 1−x Zr x O 2 (HZO(x)) and antiferroelectric (AFE) ZrO 2 layers. At x < 0.5, the measurements of polarization vs electric field revealed pure FE hysteresis loops, whereas at x > 0.5, pinched hysteresis loops with some remnant polarization were observed, which indicate a coexistence of FE and AFE orderings. Finally, a pure ZrO 2 thin film (x = 1) exhibits only an AFE double hysteresis loop. In this way, we demonstrate that the coexistence of FE and AFE orderings can be controlled by adjusting the composition of HZO(x) layers in the HZO(x)/ZrO 2 nanolaminate films. At x = 0.5, the dielectric constant is ∼60 in nanolaminate films, which is much higher than that of the conventional HZO(x) solid solution thin films. Structural investigations confirm a coexistence of polar orthorhombic and nonpolar tetragonal structures, which is consistent with the observed polarization hysteresis loops. We also show that the strain generated in the nanolaminate structure significantly facilitates a field-induced transition from the AFE to the FE phase. The design does not considerably affect the leakage current in HZO(x)/ZrO 2 nanolaminate films, which makes this system highly promising for complementary metal oxide semiconductor-compatible capacitors.

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Section: Resultsmentioning

confidence: 96%

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Kashir

Farahani

Kamba

et al. 2021

ACS Appl. Electron. Mater.

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“…Liao et al optimized the ferroelectricity of HfO 2 /ZrO 2 bilayers through decreasing the individual film thickness of HfO 2 and ZrO 2 by controlling atomic layer deposition (ALD) cycle. 19 The reduced grain radius from 16.6 nm to 13.0 nm contributed to the performance enhancement. Recently, Shin et al reported the ferroelectricity of HfO 2 nanodots with a diameter scaling down to 7 nm, which verified the importance of size effects.…”

Section: Introductionmentioning

confidence: 99%

“…10,[14][15][16] Among all control strategies, a few experiments have been performed to improve the properties of HfO 2 -based ferroelectric thin films through size effects. [17][18][19] Kim et al's group reported almost the same ferroelectricity in a 10 nm-thick single layer Hf 0.5 Zr 0.5 -O 2 film and 40 nm-thick Hf 0.5 Zr 0.5 O 2 film, which, however, has a 1 nm-thick Al 2 O 3 insertion layer in the middle position. 18 The insertion of Al 2 O 3 could largely block the continuous grain growth of Hf 0.5 Zr 0.5 O 2 films, so an m-phase could be inhibited.…”

Section: Introductionmentioning

confidence: 99%

Constructing a correlation between ferroelectricity and grain sizes in Hf_0.5Zr_0.5O₂ ferroelectric thin films

et al. 2022

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“…Single domain switching (only two memory states) has been observed in Si-doped HfO 2 -FeFETs with a gate length of 30 nm. [22,28] To improve the multilevel capability in the highly scaled device, film engineering and nonplanar device structures have been reported, [23,[30][31][32] but more efforts are still needed for the practical applications. Moreover, the risk of reliable operation might exist due to the intrinsic stochasticity of individual domain switching and the variation among domains.…”

Section: Introductionmentioning

confidence: 99%

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO₂‐Based Ferroelectric Field‐Effect Transistor

Zeng

Liu

Dai

et al. 2021

Adv Funct Materials

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The ferroelectric field-effect transistor (FeFET) is a promising memory technology due to its high switching speed, low power consumption, and high capacity. Since the recent discovery of ferroelectricity in Si-doped HfO 2 thin films, HfO 2 -based materials have received considerable interest for the development of FeFET, particularly considering their excellent complementary metal-oxide-semiconductor (CMOS) compatibility, relatively low permittivity, and high coercive field. However, the multilevel capability is limited by the device size, and multidomain switching tends to vanish when the channel length of the HfO 2 -based FeFET approaches 30 nm. Here, multiple nonvolatile memory states are realized by tuning the electric field gradient across the Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric thin film along the channel direction of FeFET. The multi-step domain switching can be readily and directionally controlled in the HZO-FeFETs, with a very low variation. Moreover, multiple nonvolatile memory states or multi-step domain switching can be effectively controlled in the FeFETs with a channel length less than 20 nm. This study suggests the possibility to implement multilevel memory operations and mimic biological synapse functions in highly scaled HfO 2 -based FeFETs.

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Grain Size Engineering of Ferroelectric Zr-doped HfO₂for the Highly Scaled Devices Applications

Cited by 55 publications

References 20 publications

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Constructing a correlation between ferroelectricity and grain sizes in Hf_0.5Zr_0.5O₂ ferroelectric thin films

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO₂‐Based Ferroelectric Field‐Effect Transistor

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Grain Size Engineering of Ferroelectric Zr-doped HfO2for the Highly Scaled Devices Applications

Cited by 55 publications

References 20 publications

Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric

Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric

Constructing a correlation between ferroelectricity and grain sizes in Hf0.5Zr0.5O2 ferroelectric thin films

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO2‐Based Ferroelectric Field‐Effect Transistor

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Grain Size Engineering of Ferroelectric Zr-doped HfO₂for the Highly Scaled Devices Applications

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Hf_1–xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric

Constructing a correlation between ferroelectricity and grain sizes in Hf_0.5Zr_0.5O₂ ferroelectric thin films

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO₂‐Based Ferroelectric Field‐Effect Transistor