No abstract

No abstract

No abstract

No abstract

The multilevel memory performances of ferroelectric field effect transistor (FeFET) with Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric thin film are investigated. First, similar retention characteristics are observed for intermediate and saturated polarization states of HZO ferroelectric thin film, which enables memories for multi-bit data storage. And then, 2-bit/cell operation of HZO-based FeFET is demonstrated utilizing two NAND architecture compatible write schemes of varying program pulse amplitude and width. Low cycle-to-cycle variability, long retention to extrapolation of 10 years at 85 • C, and endurance of 500 cycles are achieved for the both schemes. Moreover, the mechanism for multilevel memory operations of the FeFET is illustrated based on the polarization switching dynamics of HZO ferroelectric thin film. INDEX TERMS FeFET memory, Hf 0.5 Zr 0.5 O 2 , 2-bit/cell, write schemes, retention, endurance. SHUAIZHI ZHENG received the B.S. degree in chemistry and the M.S. degree in inorganic chemistry from Beijing Normal University, China, in 2005 and 2008, respectively, and the academic degree of Doctor of Natural Sciences from the