Graphene applications in Schottky barrier solar cells

Lancellotti, L.; Polichetti, T.; Ricciardella, Filiberto; Tari, O.; Sonia, G.; Daliento, S.; Francia, G. Di

doi:10.1016/j.tsf.2012.09.040

Cited by 51 publications

(25 citation statements)

References 23 publications

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“…25(g)), only results in the appearance of a kink, which limits the cell efficiency. L. Lancellotti et al [221] used the generalized equivalent circuit model of Fig. 5(e), with circuital parameters adapted to the physical properties of the graphene/semiconductor junction, to simulate devices made of graphene sheets with different numbers of layers L N , coupled to n-and p-type Si or Ge.…”

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confidence: 99%

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

2016

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In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the exiting semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.

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confidence: 99%

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

2016

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“…Furthermore, its high conductivity makes it suitable for replacing traditional metal electrodes in diodes, which results in the formation of a Schottky contact with various semiconducting materials. 13,14 In particular, the graphene-semiconductor Schottky contact structure has recently been employed in graphene-based devices such as solar cells, [15][16][17] barristors, 18 and sensors. 19 Therefore, the investigation of Schottky contacts between graphene and semiconductors, which is the simplest but one of the most widely used structures in graphene-based devices, can be considered an important topic in graphene device application research.…”

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confidence: 99%

Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

2013

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“…In the first method, patterned HOPG was directly pressed by hand against a piece of a silicon wafer (Semiconductor Wafer Inc.) as it is shown in Fig. 1 c. In the second method, a small drop of silicon universal glue (Bison) instead of widely used polydimethylsiloxane (PDMS) [11][12][13] was deposited onto the patterned HOPG surface and cleaved after 12 hours (Fig. 1 e).…”

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confidence: 99%

Laser scribing on HOPG for graphene stamp printing on silicon wafer

et al. 2013

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Abstract:Highly oriented pyrolytic graphite (HOPG) was scribed by pulsed laser beam to produce square patterns. Patterning of HOPG surface facilitates the detachment of graphene layers during contact printing. Direct HOPG-to-substrate and glue-assisted stamp printing of a few-layers graphene was compared. Printed graphene sheets were visualized by optical and scanning electron microscopy. The number of graphene layers was measured by atomic force microscopy. Glue-assisted stamp printing allows printing relatively large graphene sheets (40x40 µm) onto a silicon wafer. The presented method is easier to implement and is more flexible than the majority of existing ways of placing graphene sheets onto a substrate.

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Graphene applications in Schottky barrier solar cells

Cited by 51 publications

References 23 publications

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

Laser scribing on HOPG for graphene stamp printing on silicon wafer

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