Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon

HongYeol, Kim; Lee, Chong Min; Kim, Jihyun; Ren, Fan; Pearton, S. J.

doi:10.1116/1.3701711

Cited by 25 publications

(24 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An ideal graphene sheet is composed of only one atomic layer is, thus, the thinnest material that has ever been produced. It is proven that graphene is a good diffusion barrier and can be used as efficient ultrathin anticorrosion coating [29]. Usually, the chemical vapor deposition (CVD) technique is used for deposition of graphene in situ on a copper substrate with the help of hydrocarbon as a carbon source under high vacuum in the presence of catalyst [30].…”

Section: Introductionmentioning

confidence: 99%

Atomic and electronic structure of graphene oxide/Cu interface

et al. 2018

View full text Add to dashboard Cite

The results of X-ray photoemission (XPS) and valence bands spectroscopy, optically stimulated electron emission (OSEE) measurements and density functional theory based modeling of graphene oxide (GO) placed on Cu via an electrophoretic deposition (EPD) are reported. The comparison of XPS spectra of EPD prepared GO/Cu composites with those of as prepared GO, strongly reduced GO, pure and oxidized copper demonstrate the partial (until C/O ratio about two) removal of oxygen-containing functional groups from GO simultaneously with the formation of copper oxide-like layers over the metallic substrate. OSEE measurements evidence the presence of copper oxide phase in the systems simultaneously with the absence of contributions from GO with corresponding energy gap. All measurements demonstrate the similarity of the results for different thickness of GO cover of the copper surface. Theoretical modeling demonstrates favorability of migration of oxygen-containing functional groups from GO to the copper substrate only for the case of C/O ratio below two and formation of Cu-O-C bonds between substrate and GO simultaneously with the vanishing of the energy gap in GO layer. Basing on results of experimental measurements and theoretical calculations we suggest the model of atomic structure for Cu/GO interface as Cu/CuO/GO with C/O ratio in gapless GO about two.

show abstract

Section: Introductionmentioning

confidence: 99%

Atomic and electronic structure of graphene oxide/Cu interface

et al. 2018

View full text Add to dashboard Cite

show abstract

“…The highly impermeable graphene has been demonstrated for impeding the migration of liquid, gas and chemical/biological molecules [12][13][14][15][16][17] . Recently, researchers used graphene layer for preventing the reaction and inter-diffusion at the interfaces of Al/Si, Cu/Si and Au/Ni [18][19][20] . These results indicate the possibility of introducing a graphene barrier into solid-state electrolyte devices, e.g., the controllable mass transport in electrochemical metallization memory cells.…”

mentioning

confidence: 99%

Mass Transport Mechanism of Cu Species at the Metal/Dielectric Interfaces with a Graphene Barrier

et al. 2014

View full text Add to dashboard Cite

The interface between the metal and dielectric is an indispensable part in various electronic devices. The migration of metallic species into the dielectric can adversely affect the reliability of the insulating dielectric and can also form a functional solid-state electrolyte device. In this work, we insert graphene between Cu and SiO2 as a barrier layer and investigate the mass transport mechanism of Cu species through the graphene barrier using density functional theory calculations, second-ion mass spectroscopy (SIMS), capacitance-voltage measurement, and cyclic voltammetry. Our theoretical calculations suggest that the major migration path for Cu species to penetrate through the multiple-layered graphene is the overlapped defects larger than 0.25 nm2. The depth-profile SIMS characterizations indicate that the "critical" thickness of the graphene barrier for completely blocking the Cu migration is 5 times smaller than that of the conventional TaN barrier. Capacitance-voltage and cyclic voltammetry measurement reveal that the electrochemical reactions at the Cu/SiO2 interface become a rate-limiting factor during the bias-temperature stressing process with the use of a graphene barrier. These studies provide a distinct roadmap for designing controllable mass transport in solid-state electrolyte devices with the use of a graphene barrier.

show abstract

“…Since the graphene is an excellent diffusion barrier at elevated temperatures, the stability of AgNWs can be improved by the deposition of graphene. 25,26 After thermal annealing, the R sh of hybrids 2 and 3 decreased to 847 and 891 /sq., respectively, which indicates 20% and 16% decreases in the R sh compared to that of hybrid 1 (non-annealed), respectively. Significant differences between hybrids 2 and 3 were not observed, implying that the thermal annealing step had more influence on the electrical properties of the AgNWs than on those of graphene.…”

Section: Resultsmentioning

confidence: 98%

Improvement of Conductivity in Graphene by Ag Nanowires under a Non-Uniform Electric Field

Lee

Kim

et al. 2014

ECS Solid State Letters

View full text Add to dashboard Cite

We demonstrated the precise positioning of silver nanowires (AgNWs) assisted by a non-uniform electric field to improve the sheet resistance of a graphene layer. The distribution of AgNWs aligned by dielectrophoretic force at a peak-to-peak voltage of 20 V was well matched to the results of the finite element method calculation. The sheet resistance of graphene obtained by the circular transmission line method was improved by the controlled integration with AgNWs. Effects of thermal annealing on the graphene-AgNW hybrid structures were also systematically characterized, demonstrating decreases in the sheet resistance by up to 20%. The results from our study suggest that the conductivity of graphene can be locally tailored by positioning AgNWs using dielectrophoresis.Optimizations of the optical transmittance and sheet resistance (R sh ) of transparent conducting electrodes (TCEs) are essential factors to improve the performance of optoelectronic devices such as light-emitting diodes (LEDs), photodetectors and solar cells. 1,2 Although indium tin oxide (ITO) has been a dominant material in TCE, the replacement of ITO material has been intensively studied because it suffers from limited supply, low failure strain, chemical/mechanical instability, and low transmittance in the ultraviolet spectral region. 3 Recently, graphene has attracted great attention as a strong candidate for the replacement of ITO due to its high optical transmittance, exceptional thermal/electrical conductivity, high flexibility, and superior mechanical stability. 3-5 However, the high R sh (1-3 few layers, ∼ 500-1100 /sq.) and contact (0.94 k μm to Au metallization) resistances of graphene still need to be improved. [6][7][8] Chemical doping, substitutional doping and metal-nanowire hybrid structures of graphene have been extensively studied to lower its high R sh and tune its work-function. 8-10 However, chemical doping has been reported to suffer from long-term stability problems. 9 In addition, it is complicated to control the growth conditions needed to achieve substitutional doping. In sharp contrast, the employment of graphene hybrid structures integrated with other metallic materials is a very effective, reliable and straight-forward method to enhance the electrical properties of graphene. Graphene-metal hybrid structures have previously been reported using metal grids, metal nanowires, carbon nanotubes (CNT), etc. 11-13 Zhu et al. demonstrated a graphene-metal grid hybrid structure with lower R sh than that of the metal grid or graphene. 12 Tung et al. fabricated a graphene-CNT hybrid structure using a solution-based method, offering an improved R sh . 13 Among these, the metal nanowire-graphene hybrid structure that is expected to have co-percolating networks is considered very promising. Especially, silver is attractive owing to their excellent electrical (6.3 × 10 7 S · m −1 ) and thermal conductivities (429 W · m −1 · K −1 ). 14 Also, the networks of silver nanowires (AgNWs) show superior transparency (>70% in a visible spectral r...

show abstract

Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon

Cited by 25 publications

References 14 publications

Atomic and electronic structure of graphene oxide/Cu interface

Atomic and electronic structure of graphene oxide/Cu interface

Mass Transport Mechanism of Cu Species at the Metal/Dielectric Interfaces with a Graphene Barrier

Improvement of Conductivity in Graphene by Ag Nanowires under a Non-Uniform Electric Field

Contact Info

Product

Resources

About