2020
DOI: 10.7566/jpsj.89.034708
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Graphene-based Symmetric and Non-Symmetric Magnetoresistive Junctions

Abstract: First-principles investigations combined with the nonequilibrium Green's function method are conducted to understand the spin-polarized transport property in graphene (Gr) based magnetic tunnel junctions (MTJs). Our systematic and comparative investigation is not only restricted to junctions with Ni electrodes on both sides (symmetric junctions) but also the junctions where one side is Ni and the other is Co (non-symmetric junctions). The spin-resolved density of states and k-resolved transmission spectrum are… Show more

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Cited by 3 publications
(2 citation statements)
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“…Over the last decade, the non-equilibrium Green's function formalism [54] has been used by a few groups to rationalize the spin-injection properties of various interfaces under finite bias voltage. [55][56][57] In a lateral spin-valve device configuration as shown in Figure 2a, the spin information is first generated and injected by the spin polarizer. By applying a rather small bias voltage (typically in the 10 mV range), the spin information is then propagated within the channel carried by the electrical charge current.…”
Section: Physics Of Lateral Spin-valvesmentioning
confidence: 99%
See 1 more Smart Citation
“…Over the last decade, the non-equilibrium Green's function formalism [54] has been used by a few groups to rationalize the spin-injection properties of various interfaces under finite bias voltage. [55][56][57] In a lateral spin-valve device configuration as shown in Figure 2a, the spin information is first generated and injected by the spin polarizer. By applying a rather small bias voltage (typically in the 10 mV range), the spin information is then propagated within the channel carried by the electrical charge current.…”
Section: Physics Of Lateral Spin-valvesmentioning
confidence: 99%
“…Over the last decade, the non‐equilibrium Green's function formalism [ 54 ] has been used by a few groups to rationalize the spin‐injection properties of various interfaces under finite bias voltage. [ 55–57 ]…”
Section: Physics Of Lateral Spin‐valvesmentioning
confidence: 99%