Graphene Formation on a 3C-SiC(111) Thin Film Grown on Si(110) Substrate

Abstract

With its industrial adaptability, epitaxial graphene (EG), formed by a UHV annealing of SiC substrates, is attracting recent attention. While hexagonal SiC bulk substrates have been solely used for this purpose, benefits in use of 3C-SiC virtual substrate founded on Si substrates could be enormous. We have succeeded in fabricating a graphene film on a 3C-SiC(111) virtual substrate, which was preformed on a Si(110) substrate by gas-source molecular beam epitaxy using monomethyl silane. The geometrical matching in this configuration greatly suppresses the strain in the SiC film, which is related to this successful formation of graphene.

Influence of twin boundary orientation on magnetoresistivity effect in free standing 3C–SiC

“…In addition it has been indicated that the cubic SiC maybe a good substrate for growth of graphene [1]. The smaller band gap (2.23 eV) compared to hexagonal polytypes lower the interface state density in the 3C-SiC/SiO 2 and 3C-SiC/graphene systems, thus ensuring a higher channel mobility in the respective electronic devices.…”

Graphene Transistors and RF Applications

“…Graphene synthesis directly on silicon substrates is highly attractive because graphene wafers can be scaled-up significantly larger than commercially available (4,6)H-SiC substrates; this technique is being evaluated either via a direct carbon deposition [Hackley et al, 2009] or via a growth of template layer such as 3C-SiC [Suemitsu et al, 2009]. Utilizing a 3C-SiC(111) template grown on Si(110), epitaxial graphene-on-Si FETs are reported with Ion of >0.03 μA/μm at V ds = 1V in a top-gated layout [Kang et al, 2009].…”

Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials

“…The sample used in this experiment is heteroepitaxial graphene film grown on a 3C-SiC (110) thin film heteroepitaxially grown on a 300-μm thick Si(110) substrate via thermal graphitization of the SiC surface [17][18][19]. In the Raman spectrum of the graphene film, the principal bands of graphene, namely, the G (1595 cm −1 ) and G' (2730 cm −1 ) bands, are observed, as shown in Fig.…”