Graphene Transistors and RF Applications

Moon, Junghwan; Gaskill, Kurt; Campbell, Paul M.

doi:10.5772/16102

Cited by 2 publications

(2 citation statements)

References 19 publications

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“…Frequency multiplication or mixing is based on the nonlinearity of graphene FETs near the ambipolar point. of graphene FETs, ambipolar mixers were demonstrated in the GHz range [35,36]. The conversion loss is typically in the order of 20-30 dB, which has to be solved in order to make ambipolar frequency doublers and mixers competitive technologies.…”

Section: Graphene Fet Ambipolar Rf Applicationsmentioning

confidence: 99%

Graphene field-effect transistor for radio-frequency applications : review

Moon¹

2012

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Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for highperformance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

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Section: Graphene Fet Ambipolar Rf Applicationsmentioning

confidence: 99%

Graphene field-effect transistor for radio-frequency applications : review

Moon¹

2012

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“…The high carrier Fermi velocity and mobility make graphene promising for high-speed field-effect transistors, which are key components to realize high-performance radio frequency (RF), microwave, and terahertz sources and mixers [ 3 , 4 , 5 , 6 ]. Because the carrier concentration, as well as the frequency-dependent surface conductivity, is electrically tunable [ 1 ], graphene is also an important material to fabricate electrically tunable passive functional devices, such as filters, absorbers, modulators, and antennas working in RF, microwave, and terahertz frequency regimes [ 7 , 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Strong Terahertz Absorption of Monolayer Graphene Embedded into a Microcavity

et al. 2021

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Terahertz reflection behaviors of metallic-grating-dielectric-metal (MGDM) microcavity with a monolayer graphene embedded into the dielectric layer are theoretically investigated. A tunable wideband reflection dip at about the Fabry–Pérot resonant frequency of the structure is found. The reflectance at the dip frequency can be electrically tuned in the range of 96.5% and 8.8%. Because of the subwavelength distance between the metallic grating and the monolayer graphene, both of the evanescent grating slit waveguide modes and the evanescent Rayleigh modes play key roles in the strong absorption by the graphene layer. The dependence of reflection behaviors on the carrier scattering rate of graphene is analyzed. A prototype MGDM-graphene structure is fabricated to verify the theoretical analysis. Our investigations are helpful for the developments of electrically controlled terahertz modulators, switches, and reconfigurable antennas based on the MGDM-graphene structures.

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Graphene Transistors and RF Applications

Cited by 2 publications

References 19 publications

Graphene field-effect transistor for radio-frequency applications : review

Graphene field-effect transistor for radio-frequency applications : review

Strong Terahertz Absorption of Monolayer Graphene Embedded into a Microcavity

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