Graphene Grown on Sapphire Surface by Using SiC Buffer Layer with SSMBE

Santos³

et al. 2016

Mat. Res.

The thermal decomposition of silicon carbide (SiC), with the subsequent formation of graphene, can be achieved by heating treatment. Several heating processes have been applied for this purpose by using SiC, either in form of powder particles or monocrystalline substrate. In this work, instead of using an expensive commercially available SiC wafer, a polycrystalline SiC substrate was obtained, based on powder metallurgy process, in order to explore the synthesis of graphene layers on its surface by using a CO 2 laser beam as heating source. Different levels of energy density (fluence) were applied and Raman spectroscopy analyses demonstrated that graphene layers were formed on the polycrystalline SiC surface. The ratio of the integrated intensity of the D and G bands, and the crystallite size were calculated. The FWHM of the 2D band peaks are in excellent agreement with the range of values found in the literature. The samples irradiated with energy density of 138.4 J/cm 2 presented lower concentration of defects and higher crystallite size, while the lowest FWHM was obtained for energy density of 188 J/cm 2 . The process occurred at room conditions and no gas flow was used. The results reveal a simple and cost-effective alternative for synthesis of graphene-based structures on SiC.

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Graphene on Polycrystalline SiC Substrate Using Heating by CO2 Laser Beam

Galvão¹,

Santos³

et al. 2016

Mat. Res.

“…Among the graphene synthesis methods, the thermal decomposition processes have been successfully used to grow graphene layers on silicon carbide (SiC) [ 2 , 3 , 4 , 5 ]. In general, these studies show the use of SiC wafers as substrates to be decomposed by heating, using an induction furnace at vacuum or at atmospheric pressure with an inert gas flow [ 6 , 7 , 8 , 9 , 10 ]. The kinetics of graphene formation and properties, such as structure and morphology, have been shown to be dependent on the reactor pressure, type of gas atmosphere, orientation, and face termination of the SiC wafer [ 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

A Novel Method of Synthesizing Graphene for Electronic Device Applications

Galvão

Pessoa

et al. 2018

Materials

This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO2 laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications.

“…Among the graphene synthesis methods, the thermal decomposition processes have been successful used to grow graphene layers on silicon carbide (SiC) [2][3][4][5]. In general, these studies show the use of SiC wafers as substrates to be decomposed by heating using an induction furnace at vacuum or at atmospheric pressure with an inert gas flow [6][7][8][9][10]. The kinetics of graphene formation and properties, such as structure and morphology, show to be dependent on the reactor pressure, type of gas atmosphere, orientation and face termination of the SiC wafer [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

A Novel Method of Synthesizing Graphene for Electronic Device Applications

Galvão¹,

Pessoa³

et al. 2018

Preprint

This article reports a novel and efficient method to synthesize graphene by thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. A CO2 laser beam heating without vacuum or controlled atmosphere was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in form of small islands with quality, density and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibits a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafer, which indicates its potential for electronic device applications.