Graphene Growth Directly on SiO2/Si by Hot Filament Chemical Vapor Deposition

Abstract

We report the first direct synthesis of graphene on SiO2/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed by spontaneous cooling to room temperature. A thin copper-strip was deposited in the middle of the SiO2/Si substrate as catalytic material. Raman spectroscopy mapping and atomic force microscopy measurements indicate the growth of few-layers of graphene over the entire SiO2/Si substrate, far beyond the thin copper-strip, while X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy showed negligible amounts of copper next to the initially deposited strip. The scale of the graphene nanocrystal was estimated by Raman spectroscopy and scanning electron microscopy.

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition

“…The SiC substrates were introduced into the HFCVD equipment (BWS-HFCVD1000, Blue Wave, Baltimore, MD, USA; , accessed on 25 July 2022) [ 14 ], and the chamber was evacuated to 1 × 10 −3 Torr. The graphene deposition procedure was then carried out in two steps: (1) annealing and (2) growth.…”

“…There are many techniques to obtain graphene, including microexfoliation [ 2 ], graphene oxide reduction [ 3 ], epitaxial growth on SiC [ 4 , 5 ], and chemical vapor deposition (CVD) [ 4 , 6 , 7 ]. This CVD methodology is the most widely used and efficient method to grow graphene [ 8 , 9 ] and can be further subdivided into thermal chemical vapor deposition (TCVD) [ 10 , 11 ], hot filament chemical vapor deposition (HFCVD) [ 12 , 13 , 14 ], and plasma-enhanced CVD (PECVD) [ 15 , 16 ]. Among these, the HFCVD method has been shown to be a systematic and easier way to control the growth parameters.…”

“…Among these, the HFCVD method has been shown to be a systematic and easier way to control the growth parameters. This technique allows two thermal points (holder temperature and filament) to be set independently, resulting in a temperature gradient on the sample [ 12 , 13 , 14 ]. To take advantage of its excellent electrical properties, graphene must be deposited on particular substrates, i.e., dielectrics, such as silicon carbide (SiC).…”

Enhanced Performance of Transfer‐Free Graphene Transparent Conductive Films on Insulating Substrates by Introducing Array Nanostructure

“…Direct growth of graphene based CVD has been realized on a variety of insulating substrates, such as Si 3 N 4 , [13] sapphire, [14] quartz, [15] and SiO 2 /Si. [16] With the development of this field, the synthesis strategy of directly generating graphene on insulating substrates by metal-assisted synthesis has been proposed. Cu foil is widely used because it can easily produce saturated Cu vapor pressures at a typical CVD reaction temperature (around 1000 °C), demonstrating that Cu vapor is a powerful catalyst for graphene synthesis.…”

“…Direct growth of graphene based CVD has been realized on a variety of insulating substrates, such as Si 3 N 4 , [13] sapphire, [14] quartz, [15] and SiO 2 /Si [16] . With the development of this field, the synthesis strategy of directly generating graphene on insulating substrates by metal‐assisted synthesis has been proposed.…”