Graphene growth using propane‐hydrogen CVD on 6H‐SiC(0001): temperature dependent interface and strain

Michon, A.; Largeau, L.; Mauguin, O.; Ouerghi, Abdelkarim; Vézian, S.; Lefebvre, Denis; Roudon, E.; Zieliński, Marcin; Chassagne, Thierry; Portail, Marc

doi:10.1002/pssc.201100225

Cited by 13 publications

(17 citation statements)

References 17 publications

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“…In order to obtain only one ML Gr growth, it is fundamental to suitably dose the percentage of the hydrogen, argon, and propane gases. Indeed, the surface morphology strongly depends on the competition between H 2 etching of the SiC surface and C 3 H 8promoting Gr growth: 53,54 small additions of propane to the hydrogen atmosphere suppress the etching of SiC, while too large quantities could degrade the surface morphology. 53 Our CVD experimental conditions are very close to the thermodynamic equilibrium ones.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications

Jabra

Berbézier

Michon

et al. 2021

ACS Appl. Nano Mater.

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Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in microelectronics. With this study we shed light on the generic mechanism which produces the coexistence of two different types of Gr domains, whose proportion can be carefully controlled by tuning the H2 flow rate. For the first time, we show that the growth of Gr using CVD under H2/Ar flow rate proceeds in two stages. Firstly, the nucleation of free-standing epitaxial graphene on hydrogen (H-Gr) occurs, then H-atoms eventually desorb from either step edges or defects. This gives rise, for H2 flow rate below a critical value, to the formation of (6x6)Gr domains on 6H-SiC(0001). The front of H-desorption progresses proportionally to the reduction of H2. Using a robust and generic X-ray photoelectron spectroscopy (XPS) analysis, we realistically quantify the proportions of H-Gr and (6x6)Gr domains of a Gr film synthetized in any experimental conditions. Scanning tunnelling microscopy supports the XPS measurements. From these results we can deduce that the H-assisted CVD growth of Gr developed here is a unique method to grow fully free-standing H-Gr on the contrary to the method consisting of H-intercalation below epitaxial Gr on buffer layer. These results are of crucial importance for future applications of Gr/SiC(0001) in nanoelectronics, providing the groundwork for the use of Gr as an optimal template layer for Van der Waals homo-and hetero-epitaxy.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications

Jabra

Berbézier

Michon

et al. 2021

ACS Appl. Nano Mater.

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“…The most widely studied among the carbon sources is propane [114,121,124,126,[128][129][130][131][132][133][134][135][136][137]. There is only a few works devoted to ethene [125], toluene [127] and xylene [127] as carbon sources for graphene growth on silicon carbide.…”

Section: Growth Of Graphene On Sic Using External Sourcesmentioning

confidence: 99%

“…Up to this moment we considered only the literature reports devoted to propane-argon assisted growth, but there is also some interesting experimental data on CVD growth of graphene by using hydrogen as a carrier gas [114,126,129,131,132,136]. Michon et al [114,126,129] demonstrated the possibility of direct growth of graphene on 6H-SiC (0001) and 3C-SiC/Si substrates. It was concluded that the increase in propane flow in propane-hydrogen gas mixture leads to a significant decrease in the SiC etching rate and increase in graphene thickness.…”

Section: Growth Of Graphene On Sic Using External Sourcesmentioning

confidence: 99%

Combining graphene with silicon carbide: synthesis and properties – a review

Shtepliuk

Khranovskyy

Yakimova

2016

Semicond. Sci. Technol.

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Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. SiC promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly dependent on the synthesis method and the growth modes.In this paper a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC.First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC which is facilitated by the nature of SiC to assume graphitization. As concerning the synthesis methods we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation.We address in detail the main aspects of the substrate effect such as substrate face polarity, offcut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks. Outline

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“…Attempts to avoid the metal substrates and directly grow graphene by CVD on insulators or semiconductors, such as SiC, SiO 2 , AlN, h‐BN, mica, Si or Ge were partially successful. However, in terms of grain size, number of layers, defect density, and azimuthal orientation the graphene flakes grown on these substrates, possibly except for the cases H‐terminated Ge(110) and SiC, did not yet reach the quality grown on metals …”

Section: Introductionmentioning

confidence: 99%

Single Crystalline Metal Films as Substrates for Graphene Growth

et al. 2017

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Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO) 4 .

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Graphene growth using propane‐hydrogen CVD on 6H‐SiC(0001): temperature dependent interface and strain

Cited by 13 publications

References 17 publications

Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications

Hydrogen-Mediated CVD Epitaxy of Graphene on SiC: Implications for Microelectronic Applications

Combining graphene with silicon carbide: synthesis and properties – a review

Single Crystalline Metal Films as Substrates for Graphene Growth

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