Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector

Li, Xiaoqiang; Lin, Shan‐Yang; Lin, Xing; Xu, Zhijuan; Wang, Peng; Zhang, Shengjiao; Zhong, Huikai; Xu, Weiwei; Wu, Zhanjun; Fang, Wei

doi:10.1364/oe.24.000134

Cited by 116 publications

(64 citation statements)

References 43 publications

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“…7 Due to simple procedure and easy integration, An et al 8 developed a graphene/Si photodetector with high responsibility of 0.435A/W and the responsivity was further improved to 3A/W by Antonio et al 9 by introducing an embedded oxide layer. Other substrates like Ge, 10 GaAs, 11 InAs 12 were also combined with graphene to satisfy the needs of infrared wavelength detection.…”

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confidence: 99%

The controlled growth of graphene nanowalls on Si for Schottky photodetector

et al. 2017

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Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs)-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

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confidence: 99%

The controlled growth of graphene nanowalls on Si for Schottky photodetector

et al. 2017

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“…[ 21 ] Evidently, such heterostructures yielded a higher Seebeck coeffi cient of ≈99.3 µV K −1 (Figure 3 g) than that of the in-plane monolayer graphene (≈50 µV K −1 ). [ 22 ] A rather high power conversion effi ciency (≈10.18%) compared to that of conventional ones (≈8.63%) (Figure 3 i) was achieved, possibly owing to the suppression of statistic charge transfer, as well as the increase of the barrier height with the presence of fi ve layer h -BN. Very recently, Lin et al designed a sandwiched diode consisting of G/ h -BN/ GaAs layers (Figure 3 h) for solar cell applications.…”

Section: Research Newsmentioning

confidence: 94%

“…[ 11 ] Subsequently, they have acted as prototype systems for exploring some novel physics issues, such as commensurate-incommensurate transitions and Hofstadter's butterfl y effect. [ 11,[17][18][19][20][21][22][23] As an example, G/ h -BN heterostructures have yielded so far the carrier mobilities as high as 350 000 cm 2 V −1 s −1 , owing to the atomically fl at and dangling-bond-free feature of h -BN that greatly avoids the interface charge transfer. [ 11,[17][18][19][20][21][22][23] As an example, G/ h -BN heterostructures have yielded so far the carrier mobilities as high as 350 000 cm 2 V −1 s −1 , owing to the atomically fl at and dangling-bond-free feature of h -BN that greatly avoids the interface charge transfer.…”

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confidence: 99%

Graphene/h‐BN Heterostructures: Recent Advances in Controllable Preparation and Functional Applications

Song

Sun

et al. 2016

Advanced Energy Materials

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1 of 7) 1600541 wileyonlinelibrary.com RESEARCH NEWSlayers, provides quite new properties and versatile applications beyond their single component. [6][7][8][9][10] As the most commonplace 2D vertical heterostructures, graphene/hexagonal boron nitride (denoted as G/ h -BN), have stimulated extensive interest since its construction by Dean et al. in 2010 by a layer-by-layer transfer method. [ 11 ] Subsequently, they have acted as prototype systems for exploring some novel physics issues, such as commensurate-incommensurate transitions and Hofstadter's butterfl y effect. [12][13][14][15][16] More signifi cantly, such heterostructures have also dramatically stimulated the applications of graphene in nanoelectronics, photo-detection, and energy harvesting/conversion. [ 11,[17][18][19][20][21][22][23] As an example, G/ h -BN heterostructures have yielded so far the carrier mobilities as high as 350 000 cm 2 V −1 s −1 , owing to the atomically fl at and dangling-bond-free feature of h -BN that greatly avoids the interface charge transfer. [ 11,17,18 ] Securing reliable and robust methods for fabricating large area, high quality, stacking geometry controllable heterostructures becomes the most signifi cant step for related fi elds. To date, three typical strategies have been developed to produce G/ h -BN heterostructures, including layer-by-layer transfer of separately exfoliated 2D layers, [ 11,17,[24][25][26] chemical vapor deposition (CVD) via an epitaxial mechanism, [27][28][29][30][31][32] and co-segregation from solid C and BN precursors. [ 33 ] Of particular note, the latter two methods have just been established in the last two years. Obviously, the layer-by-layer stacking of exfoliated materials can afford high-quality samples suitable for proof-of-concept device fabrications, whilst CVD and co-segregation routes are promising for the large-scale, thickness uniform, interface-clean, stacking geometry controllable synthesis of G/ h -BN, mainly mediated by a vdW epitaxy mechanism.In this research news, we highlight the recent development towards the fabrication, characterization, as well as versatile applications in energy-effi cient nanoelectronics and energy conversion/harvesting of the G/ h -BN heterostructures. We aim to provide a broad, but not exhaustive summary of the latest advances in this exciting fi eld. We conclude with the main challenges and possible opportunities that researchers in this fi eld are facing. Overview of Controllable Preparation of G/ h -BN HeterostructuresPreparing G/ h -BN heterostructures is at current a hot issue with growing interests. Several reliable methods have been Vertical heterostructures based on two-dimensional (2D) layered materials such as graphene and hexagonal boron nitride have emerged as a new paradigm of functional materials. Representing the thinnest and most commonplace 2D heterostructures, graphene/ h -BN, have recently attracted considerable attentions due to their remarkable morphological, electrical, and thermal properties. Herein, this research news highlig...

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“…Recently we witness integration of different layers of two-dimensional materials for much wider applications than previously thought, including renewable energy such as, e.g., photovoltaics [1,2], hydrogen storage [3] and other. The one-atom-thick 2D structures and/or their multilayers offer remarkable physical and chemical properties, which can make a profound impact in many areas of renewable energy.…”

Section: Introductionmentioning

confidence: 99%

Functionalized Graphene and Hexagonal Boron Nitride (hBN) Two Dimensional Heterosystems for Solar Cell Applications

Shkrebtii¹,

Rohlfing²

2024

RE&PQJ

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ABSTRACT:We present preliminary results of theoretical investigation of mono-and multi-layers of graphene (G), hexagonal boron nitride (hBN) and/or their combinations, functionalized with hydrogen, which are prospective for photovoltaic (PV) applications. Controlled hydrogenation of the above layered systems allows to simultaneously tune 2D electron gap of the materials, create strong covalent interlayer bonding or bond the multilayers to a substrate. The functionalized nanomaterials under investigation demonstrate not only chemical stability and natural hardness, but they are also compatible with standard growth technologies used in photovoltaics. Such multilayers can be used as transparent solar cell windows, an interfacial layer, e.g., in a form of a tunnel junction, an electrode, 2D semiconducting material and other. In particular, graphene/hBN heterosystems considered, allow tailoring of structural, electronic and bonding properties by controlled dose of hydrogen. Their promising PV applications as well as already existing experimental implementations will be discussed in the end.

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Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector

Cited by 116 publications

References 43 publications

The controlled growth of graphene nanowalls on Si for Schottky photodetector

The controlled growth of graphene nanowalls on Si for Schottky photodetector

Graphene/h‐BN Heterostructures: Recent Advances in Controllable Preparation and Functional Applications

Functionalized Graphene and Hexagonal Boron Nitride (hBN) Two Dimensional Heterosystems for Solar Cell Applications

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