Graphene Hybrid Structures for Integrated and Flexible Optoelectronics

Chen, Xiaoqing; Shehzad, Khurram; Gao, Li; Long, Mingsheng; Guo, Hui; Qin, Shiqiang; Wang, Xiaomu; Wang, Frank; Shi, Yi; Hu, Weida; Xu, Yang

doi:10.1002/adma.201902039

Cited by 156 publications

(122 citation statements)

References 283 publications

(613 reference statements)

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“…As demonstrated in Figure 5c, the effective mass of electron m e is substantially reduced, and the m h is generally increased under ε y strain. Therefore, the anisotropic electron transport is predicted to be enhanced by using ε y strain engineering, suggesting great potential applications of the GeP/Gr heterostructure for flexible electronic device 2. In order to explore its potential application for water splitting, we calculated the edge positions of the GeP/Gr heterostructure.…”

Section: Resultsmentioning

confidence: 99%

“…The 2D materials have attracted tremendous interest due to their exotic properties and great potential in practical applications,1,2 such as electronic device, energy storage, catalysis, sensing, and so on 3–5. More recently, the few‐layered and monolayered group IV‐V semiconductors have been fabricated and shown to possess excellent structural stability 6–12.…”

Section: Introductionmentioning

confidence: 99%

“…For instance, Liu et al have experimentally shown the realization of ohmic contact for the 2D MoS 2 semiconductor by using graphene as back electrodes and the improved mobility of 1300 cm 2 V −1 s −1 32. The heterostructures of 2D materials with graphene also induce the change of graphene's shape and the configuration of the heterostructures, giving rise to novel electronic and photoelectric properties 2,33,34. More importantly, the electronic and optical performances of 2D semiconductors can be further tuned by strain engineering for device applications 35,36…”

Section: Introductionmentioning

confidence: 99%

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Tunable Electronic Properties and Potential Applications of 2D GeP/Graphene van der Waals Heterostructure

Zeng

Chen

Ge³

2020

Adv Elect Materials

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Heterostructure of various 2D semiconductors have attracted extensive attention due to their tunable electronic properties and tremendous application potential. Using first‐principles calculations, the electronic properties of a GeP/graphene van der Waals heterostructure are studied and the physical mechanism of its properties modulated by strain and electric field are examined. The calculations reveal that not only the electronic properties of the GeP/Graphene heterostructure, but also the position of the graphene's Dirac cone, can be modulated by uniaxial strain. Interestingly, uniaxial strain can induce p‐type to n‐type Schottky contact transition and its band alignment allows photocatalytic water splitting. The band edges of the GeP relative to that of graphene are effectively modulated by transverse electric field. These findings provide comprehensive understanding of fundamental properties of the GeP/graphene heterostructure and its tunable electronic properties through strain engineering and electric fields, which will be helpful to the application of 2D GeP‐based nanodevices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Tunable Electronic Properties and Potential Applications of 2D GeP/Graphene van der Waals Heterostructure

Zeng

Chen

Ge³

2020

Adv Elect Materials

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“…Gao has also reported the progress of 2D material flexible devices field, reviewing architecture/performance and fabrication techniques. Recently, Chen et al reviewed the recent advances in graphene hybrid structures for integrated and flexible optoelectronics with an emphasis on different types of heterostructures and flexible sensing applications. Our review work comprises the most recent progress on the 2D materials based flexible photodetectors including, a breakdown of 2D materials properties for enhancing flexible photodetection, processing methods to engineer 2D materials onto flexible substrates, structural design of 2D material flexible photodetector (working mechanism and performance), and integration in optical sensors.…”

Section: Introductionmentioning

confidence: 99%

Flexible Photodetector Based on 2D Materials: Processing, Architectures, and Applications

Dong

Simões

Yang

2020

Adv Materials Inter

148

111

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Flexible photodetectors have emerged during the past few years for applications in healthcare, security, and environmental monitoring. Recently, 2D materials have started being implemented as functional layers in flexible photodetector due to their outstanding optoelectronic characteristics paired with high mechanical flexibility. In this work, the authors analyze the progress of 2D material‐based flexible photodetectors architectures, with a focus on graphene family, (Di)chalcogenides and van der Waals heterostructures. The optical and mechanical characteristics of 2D materials flexible photodetectors are systematically analyzed. Furthermore, the processing techniques compatible with flexible substrates and proof‐of‐concept sensors integrating 2D material flexible photodetectors are also reviewed. In the last section, the remaining challenges and future perspectives are discussed, envisioning to support future developments in the field.

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“…[ 1 ] Due to its outstanding electronic, optical and mechanical properties, graphene was highly expected as a material to meet the increasing requirements for high‐performance flexible, transparent and wearable electronic and optoelectronic devices. [ 2–8 ]…”

Section: Introductionmentioning

confidence: 99%

Ambipolar 2D Semiconductors and Emerging Device Applications

Sheng

Hou

et al. 2020

Small Methods

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the emergence of nanoscience and technology. Reviewing the history over the past 60 years, new devices based on new materials and new physics have been driving the development of integration circuits (ICs) along the Moore's law. Therefore, it has always been a frontier to explore new materials and novel physical properties that can help to push forward the development of ICs. In addition, currently, the multiple requirements for ICs are becoming increasingly important, such as flexible, transparent, and wearable. Just in this context, graphene, an ultrathin graphitic layer with a honeycomb structure, has aroused a wide attention since its discovery, which was demonstrated as a metallic transistor and proposed for high-frequency electronic circuits. [1] Due to its outstanding electronic, optical and mechanical properties, graphene was highly expected as a material to meet the increasing requirements for high-performance flexible, transparent and wearable electronic and optoelectronic devices. [2-8] The emergence of graphene inspired researchers to look for other 2D materials from van der Waals solids (VDWSs) since the one-atomic-layer graphene was revealed to be thermodynamically stable under ambient conditions. Up to now, 2D atomic crystals have been found in various VDWSs like hexagonal boron nitride (hBN), black phosphorus (BP), metal dichalcogenides (MDCs, like MoS 2 , WSe 2 , MoTe 2 , SnS 2 , and so on), and layered oxide, the basic of which can be seen in hundreds of reviews. [9-16] These graphene-like 2D materials are the thinnest crystals with the thickness usually less than 1 nm. They often exhibit distinctive properties different from conventional bulk materials. For example, bulk MoS 2 is of indirect bandgap but the monolayer is of direct one; [17,18] the bandgap of few layer semiconducting 2D layers often increases with the thickness decreasing, and can be modulated by electric field; [19-23] theoretical calculations indicate that the sunlight absorptivity of MDC monolayers like MoS 2 , MoSe 2 , and WS 2 is up to 5-10% that is 1 order higher than Si and GaAs, enabling them promising for ultrathin optoelectronic devices. [24] Besides, the 2D family covers a wide conductive range from metals, semimetals, semiconductors to insulators, offering a possibility to construct ultrathin devices totally based on 2D crystals. [25-27] And, as the study continues With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, lightemitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrate...

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Graphene Hybrid Structures for Integrated and Flexible Optoelectronics

Cited by 156 publications

References 283 publications

Tunable Electronic Properties and Potential Applications of 2D GeP/Graphene van der Waals Heterostructure

Tunable Electronic Properties and Potential Applications of 2D GeP/Graphene van der Waals Heterostructure

Flexible Photodetector Based on 2D Materials: Processing, Architectures, and Applications

Ambipolar 2D Semiconductors and Emerging Device Applications

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