Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes

Min, Jung‐Hong; Son, Myungwoo; Bae, Si‐Young; Lee, Jun Yeob; Yun, Joosun; Maeng, Min-Jae; Kwon, Dae-Gyeon; Park, Yongsup; Shim, Jong‐In; Ham, Moon‐Ho; Lee, Dong-Seon

doi:10.1364/oe.22.0a1040

Cited by 20 publications

(14 citation statements)

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“…The graphene is also considered an alternative material to ITO due to excellent electrical conductively, transparency, and chemical and thermal stability [ 26 ]. Graphene and doped graphene, such as transparent electrode [ 27 ], with nanowire [ 28 ], CNTs, and SWCNTs [ 29 ], have also been studied with improved LEDs performance in term of current spreading enhancement [ 30 ] and ohmic contact formation with reduced growth temperature [ 31 ].…”

Section: Introductionmentioning

confidence: 99%

A Review on Graphene-Based Light Emitting Functional Devices

et al. 2020

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In recent years, the field of nanophotonics has progressively developed. However, constant demand for the development of new light source still exists at the nanometric scale. Light emissions from graphene-based active materials can provide a leading platform for the development of two dimensional (2-D), flexible, thin, and robust light-emitting sources. The exceptional structure of Dirac’s electrons in graphene, massless fermions, and the linear dispersion relationship with ultra-wideband plasmon and tunable surface polarities allows numerous applications in optoelectronics and plasmonics. In this article, we present a comprehensive review of recent developments in graphene-based light-emitting devices. Light emissions from graphene-based devices have been evaluated with different aspects, such as thermal emission, electroluminescence, and plasmons assisted emission. Theoretical investigations, along with experimental demonstration in the development of graphene-based light-emitting devices, have also been reviewed and discussed. Moreover, the graphene-based light-emitting devices are also addressed from the perspective of future applications, such as optical modulators, optical interconnects, and optical sensing. Finally, this review provides a comprehensive discussion on current technological issues and challenges related to the potential applications of emerging graphene-based light-emitting devices.

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Section: Introductionmentioning

confidence: 99%

A Review on Graphene-Based Light Emitting Functional Devices

et al. 2020

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“…Heterostructures of two dimensional layered materials and wide band gap semiconductors are of great importance for optoelectronic and nanoelectronic applications . Among the wide band gap semiconductors, gallium nitride (GaN) is one of the most attractive nitride semiconductor for applications in light‐emitting diodes (LEDs), solar cells, photodetectors, high‐electron‐mobility transistors, and high frequency power devices . Recently, significant interest has been given to fabricate graphene/GaN based Schottky junction considering the outstanding properties of both the materials.…”

Section: Introductionmentioning

confidence: 99%

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

Kalita

Kobayashi

Shaarin

et al. 2018

Phys. Status Solidi A

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Metal‐insulator‐semiconductor (MIS) based Schottky barrier diode (SBD) has significant importance for optoelectronics and other device applications. Here, we demonstrate the fabrication of a highly rectifying Schottky barrier diode (SBD) using a thin hexagonal boron nitride (hBN) interfacial layer in graphene and n‐type gallium nitride (n‐GaN) heterojunction. Significant reduction of reverse saturation current is obtained with the introduction of hBN layer in graphene/n‐GaN interface. The MIS based SBD shows excellent ultraviolet (UV) photoresponsivity with a light/dark ratio of ≈105 at a low reverse bias voltage (−1.5V). Temperature dependent current density‐voltage (J–V) characteristics of the graphene/hBN/n‐GaN heterojunction is investigated to elucidate the current transport behavior. The Schottky barrier height increased with increase in temperature from 0.77 to 0.98 eV in the temperature range of 298–373 K, respectively. The series resistance (RS) is also found to be temperature dependent, where RS decreased with increase in temperature. The understanding of graphene/hBN/n‐GaN heterojunction device characteristics can be significant for photodiode and switching device applications.

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“…However, the difference in work functions of ITO and p-GaN is lesser compared to graphene and p-GaN leading to a comparatively less forward voltage in the case of ITO CSL. Another major factor is that sheet resistance of graphene is higher than ITO [24][25][26]. 5 shows the variation of light output power with current injected in these two cases.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%