2012
DOI: 10.1063/1.4761474
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Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

Abstract: Carbon layer has been grown on a Ni/SiO2/Si(111) substrate under high vacuum pressure by pulse arc plasma deposition. From the results of Raman spectroscopy for the sample, it is found that graphene was formed by ex-situ annealing of sample grown at room temperature. Furthermore, for the sample grown at high temperature, graphene formation was shown and optimum temperature was around 1000 °C. Transmission electron microscopy observation of the sample suggests that the graphene was grown from step site caused b… Show more

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Cited by 26 publications
(30 citation statements)
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“…Raman spectroscopic study of a-C films has revealed the formation of multilayer graphene with optical transmittance of 80-82 % and sheet resistance of ~15 kΩ /square. The temperature of annealing has been reduced to 650 ºC in contrast to the existing temperature of annealing (≥800 ºC) cited in the literature [7][8][9]. It has been observed that the quality and graphene layers can be controlled by the thickness of a-C films.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Raman spectroscopic study of a-C films has revealed the formation of multilayer graphene with optical transmittance of 80-82 % and sheet resistance of ~15 kΩ /square. The temperature of annealing has been reduced to 650 ºC in contrast to the existing temperature of annealing (≥800 ºC) cited in the literature [7][8][9]. It has been observed that the quality and graphene layers can be controlled by the thickness of a-C films.…”
Section: Discussionmentioning
confidence: 99%
“…Zheng et al [7] have reported metal catalyzed crystallization of amorphous carbon films (2.5-40 nm thick) deposited by electron beam evaporation to graphene by thermal annealing at 650-950 ºC under argon flow at a pressure of 1.7 Torr. Recently synthesis of homogeneous graphene layer on silicon substrates with nickel film annealed at 800 ºC in nitrogen atmosphere [8] and in vacuum condition [9] by arc plasma deposition and arc discharge in He and H 2 gas combination at relatively high pressure [10] has been reported.…”
Section: Introductionmentioning
confidence: 99%
“…1-4 Since the discovery of their remarkable material features, various synthesis processes of graphene films have been proposed, such as the sublimation of silicon from SiC surfaces, 5-8 chemical vapor deposition, [9][10][11][12][13] and plasma-assisted vapor deposition. [14][15][16][17] Although most of these processes inevitably require substrate transfer procedures, some useful ideas on transfer-free techniques have been suggested. [18][19][20][21][22][23][24][25][26][27][28] To consider real-world applications of graphene, the development of practicable transfer-free processes will be very important.…”
mentioning
confidence: 99%
“…Accordingly, the respective properties of thin films deposited by the FCVA technique can be controlled and modulated by applying various process parameters (gas pressure, substrate temperature, and substrate bias). 23,24 Fujita et al 25 have utilized the pulse arc plasma deposition technique to grow graphene layers by controlling the deposition rate (0.1 nm/s). Multiple pulses were initiated with a pulse rate of 1 pulse/s, which led to the deposition of the film at required thickness.…”
Section: Introductionmentioning
confidence: 99%