2015
DOI: 10.1063/1.4928759
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Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

Abstract: Growth of ultra-uniform graphene using a Ni/W bilayer metal catalyst Appl. Phys. Lett. 106, 043110 (2015); 10.1063/1.4907166 Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

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Cited by 12 publications
(10 citation statements)
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References 31 publications
(49 reference statements)
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“…Since both methods require a transferring process, graphene growth methods that allow for direct formation on silicon substrates have been sought aer and several attempts have been reported. [27][28][29][30][31][32][33][34][35][36][37][38][39][40] In this study, we developed a procedure to grow graphene from a solid-state carbon source directly on silicon substrates. To reduce the complexity of the process, the number of steps, and the cost, we have also developed a direct patterning procedure that allows to produce graphene samples with arbitrary position, size, and shape: notably this procedure does not require any dry etching process.…”
Section: Introductionmentioning
confidence: 99%
“…Since both methods require a transferring process, graphene growth methods that allow for direct formation on silicon substrates have been sought aer and several attempts have been reported. [27][28][29][30][31][32][33][34][35][36][37][38][39][40] In this study, we developed a procedure to grow graphene from a solid-state carbon source directly on silicon substrates. To reduce the complexity of the process, the number of steps, and the cost, we have also developed a direct patterning procedure that allows to produce graphene samples with arbitrary position, size, and shape: notably this procedure does not require any dry etching process.…”
Section: Introductionmentioning
confidence: 99%
“…Surface Ni-silicidation reaction is also an effective mean for preparation of few-layer graphene (FLG) by controlled thermal annealing of SiC crystals, which was successfully demonstrated in Ni/6H-SiC (0001) system, with the best graphene structure obtained at 800 °C 6 . The similar approaches are also valuable for the transfer-free synthesis of graphene on SiO 2 7 , sapphire and Cu 2 O (111) substrates 2 , 8 . Besides Ni and Cu, another transition metal, Co, was investigated as an attractive catalyst for transfer-free graphene growth.…”
Section: Introductionmentioning
confidence: 99%
“…The direct growth technique of graphene on dielectric substrates might provide one of the optional ways to solve the above-mentioned problems. Until now, graphene films have been directly produced by the chemical vapor deposition (CVD) method or plasma-enhanced chemical vapor deposition (PECVD) method on noncatalytic planar substrates, such as Si,SiO 2 , Ge, SiN, sapphire, and quartz, and display a polycrystalline structure. , However, in these reports, the growth surfaces were planar, so these experimental results could not fully reflect and deduce the growth of graphene on the 3D microstructured dielectric surface. Different from the planar growth, the perturbation of gas flow on the 3D structured surface might bring nonuniform nucleation and growth.…”
Section: Introductionmentioning
confidence: 99%