Graphene/MoS&lt;inf&gt;2&lt;/inf&gt; Based RF-NEMS Switches for Low Actuation Voltage and Enhanced RF-Performance

Anjum, Aakif; Madhewar, Mukesh; Mohite, Suhas S.; Sawant, Vishram B.

doi:10.1109/icccnt.2018.8494166

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Cited by 7 publications

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“…The phase shift was 355°/dB in the analog design at 2.4 GHz and 138°/dB in the digital design. Anjum et al [ 60 ] used GR/MoS 2 composite materials as beam to decrease the pull-in voltage below 1 V, which can be used in RF applications requiring low driving voltage.…”

Section: Reviewmentioning

confidence: 99%

Electrostatic pull-in application in flexible devices: A review

Cai¹,

Fang²,

Fang³

et al. 2022

Beilstein J. Nanotechnol.

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The electrostatic pull-in effect is a common phenomenon and a key parameter in the design of microscale and nanoscale devices. Flexible electronic devices based on the pull-in effect have attracted increasing attention due to their unique ductility. This review summarizes nanoelectromechanical switches made by flexible materials and classifies and discusses their applications in, among others, radio frequency systems, microfluidic systems, and electrostatic discharge protection. It is supposed to give researchers a more comprehensive understanding of the pull-in phenomenon and the development of its applications. Also, the review is meant to provide a reference for engineers to design and optimize devices.

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Section: Reviewmentioning

confidence: 99%