Graphene nanoribbon tunneling field effect transistors

Mohamadpour, Hakimeh; Asgari, Asghar

doi:10.1016/j.physe.2012.09.021

Cited by 26 publications

(16 citation statements)

References 15 publications

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“…[27][28][29][30][31][32][33] Further work should include quantum mechanics to reveal structural and electronic properties of unusual carbon nanostructures, electron transport properties, and influence of electric and magnetic fields. [34][35][36][37][38][39][40][41][42] …”

Section: Resultsmentioning

confidence: 99%

Controlling Resonance Frequencies of Double-Walled Carbon-Nanotube Oscillators with Divided Outertubes

Lee¹,

Kang²

2014

j nanosci nanotechnol

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We investigated the resonance frequency distributions of carbon nanotube (CNT) oscillators with an intertube gap using molecular dynamics simulations. The resonance frequency distributions could be regressed by the use of Gaussian distributions. The maximum resonance frequencies linearly decreased with increasing initial velocity of the coretube. For the same initial velocity of the coretube, the maximum resonance frequencies were constant regardless of gap spacing changes, and the center positions of the Gaussian distributions were shifted by changing the outertube length whereas their standard deviations were not changed. Although their standard deviations were influenced by the initial velocity of the coretube, the normalized resonance frequencies could be regressed into single Gaussian distribution within some error. So considering the difficulty of exactly controlling of the initial velocity, the resonance frequency distribution predicted by the gap spacing can give important revolution for CNT-oscillators to be utilized as components of nanoelectromechanical system.

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Section: Resultsmentioning

confidence: 99%

Controlling Resonance Frequencies of Double-Walled Carbon-Nanotube Oscillators with Divided Outertubes

Lee¹,

Kang²

2014

j nanosci nanotechnol

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“…When 2l > W g , neglecting the electron and hole space charges in the region −l < x < l and taking into account the smallness of the screening length r S = κ 2 v 2 W /4e 2 T ln[1 + exp(ε F /T )] ≤ 10 nm [21,24,69], the electric-field spatial distribution in this region is given by [8,59]:…”

Section: Discussionmentioning

confidence: 99%

Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions

Ryzhii

Shur

et al. 2016

J. Phys. D: Appl. Phys.

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We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes and electrons. The operation of the GL-FET-and PGL-FET detectors is associated with the rectification of the ac current across the lateral p-n junction enhanced by the excitation of bound plasmonic oscillations in in the p-and n-sections of the channel. Using the developed device model, we find the GL-FET and PGL-FET-detectors characteristics. These detectors can exhibit very high voltage responsivity at the THz radiation frequencies close to the frequencies of the plasmonic resonances. These frequencies can be effectively voltage tuned. We show that in PL-FET-detectors the dominant mechanism of the current rectification is due to the tunneling nonlinearity, whereas in PGL-FET-detector the current rectification is primarily associated with the thermionic processes. Due to much lower p-n junction conductance in the PGL-FET-detectors, their resonant response can be substantially more pronounced than in the GL-FET-detectors corresponding to fairly high detector responsivity.

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“…Resonant tunneling devices based on the spin-resolved splitting of energy levels in the presence of spin-orbit interaction has also emerged [9][10][11][12][13][14]. At our previous work we have modeled a pnp-GNR-FET in which the pn barriers result in discrete energy levels and resonant tunneling current [15].…”

Section: Introductionmentioning

confidence: 99%

Quantum dot resonant tunneling FET on graphene

Mohammadpour

2016

Physica E: Low-dimensional Systems and Nanostructures

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At this paper a field effect transistor based on graphene nanoribbon (GNR) is modeled. Like in most GNR-FETs the GNR is chosen to be semiconductor with a gap, through which the current passes at on state of the device. The regions at the two ends of GNR are highly n-type doped and play the role of metallic reservoirs so called source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this paper it is assumed that the gate length is less than the channel length so that the two ends of the channel region are un-gated. As a result of this geometry, the two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs via these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained electron density, potential profile and current. The current variations with the gate voltage give rise to negative transconductance (NTC).

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Graphene nanoribbon tunneling field effect transistors

Cited by 26 publications

References 15 publications

Controlling Resonance Frequencies of Double-Walled Carbon-Nanotube Oscillators with Divided Outertubes

Controlling Resonance Frequencies of Double-Walled Carbon-Nanotube Oscillators with Divided Outertubes

Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions

Quantum dot resonant tunneling FET on graphene

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