Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions

Abstract

We evaluate the proposed resonant terahertz (THz) detectors on the base of field-effect transistors (FETs) with split gates, electrically induced lateral p-n junctions, uniform graphene layer (GL) or perforated (in the p-n junction depletion region) graphene layer (PGL) channel. The perforated depletion region forms an array of the nanoconstions or nanoribbons creating the barriers for the holes and electrons. The operation of the GL-FET-and PGL-FET detectors is associated with the rectification of the ac current across the lateral p-n junction enhanced by the excitation of bound plasmonic oscillations in in the p-and n-sections of the channel. Using the developed device model, we find the GL-FET and PGL-FET-detectors characteristics. These detectors can exhibit very high voltage responsivity at the THz radiation frequencies close to the frequencies of the plasmonic resonances. These frequencies can be effectively voltage tuned. We show that in PL-FET-detectors the dominant mechanism of the current rectification is due to the tunneling nonlinearity, whereas in PGL-FET-detector the current rectification is primarily associated with the thermionic processes. Due to much lower p-n junction conductance in the PGL-FET-detectors, their resonant response can be substantially more pronounced than in the GL-FET-detectors corresponding to fairly high detector responsivity.

Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures

“…The values of the GP-detector responsivity demonstrated in Fig. 3 are of the same order of magnitude or can exceed the room temperature responsivity of the proposed and realized THz photodetectors based on different heterostructures [21,[48][49][50][51][52][53][54][55][56][57][58][59], including those based on the P-channel [7,60,61] (although in G-based devices at very low temperatures much higher responsivities have been achieved [20]).…”

Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride

“…Heterostructures with graphene layers (GLs) are promising building blocks for infrared and terahertz photodetectors [1-14], optical modulators [15][16][17][18], plasmonic and frequency multiplication devices [19][20][21][22][23][24][25][26][27][28], and lasers and light-emitting diodes [29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44] (including those based on hybrid GL/black phosphorous devices [45,46]). The realization of the onchip monolithic nanoscale relatively simple light sources for high-bandwidth inter-and intra-chip connections is still a challenging problem [47].…”

Ultrasensitive Photoresponsive Devices Based on Graphene/BiI3 van der Waals Epitaxial Heterostructures

“…2D materials, such as graphene or transition metal dichalcogenides (TMDs), possess outstanding electrical properties and great potential in electronics and optoelectronics . For instance, graphene has been studied as a promising candidate for infrared and terahertz photodetection . By integrating the excellent carrier transport of 2D materials with the large optical absorption cross‐sections of lead halide perovskites, highly sensitive photodetectors (PDs) with 2D material/perovskite hybrid structures have successfully achieved ultrahigh responsivities (in the range of 10 2 –10 7 A W −1 ) and photoconductive gains, which are quite promising for low‐light imaging applications (e.g., biomedical sensing).…”