Graphene, Nanotube, and NANOWIRE‐Based Electronics

A high-performance broadband double-junction photodetector based on silicon nanowire arrays wrapped by silver nanoparticles for low-light imaging

“…Low dimensional semiconductor materials have been widely used in optoelectronic devices recently; 9,[14][15][16][17][18][19] especially, silicon nanowire (SiNW) arrays as an important member have been recognized as a desirable candidate for highly sensitive photodetector application due to their competitive advantages such as multiple reflection between forest-like structures increasing light path length, 20,21 triggering intrinsic photocurrent amplification, 22,23 prolonging photo-induced carrier lifetime owing to the large aspect ratio and shortening carrier transmission time, 18 and COMS compatibility. Moreover, SiNWs can be further decorated by other materials for constructing sensitivity and broadband photodetectors: (i) combination of twodimension materials with high carrier mobility (MoS 2 , PtSe 2 , graphene, etc.)…”