2015 15th Non-Volatile Memory Technology Symposium (NVMTS) 2015
DOI: 10.1109/nvmts.2015.7457487
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Graphene oxide and TiO2 nano-particle composite based nonvolatile memory

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Cited by 5 publications
(6 citation statements)
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“…The CE mechanism using the charge transfer is schematically illustrated in Figure b; the excitation of the laser (532 nm) on GO/RGO leads to an increase in the transfer of the electronic charge between the analyte molecules and the GO/RGO sheet through the paths . The energy value of the valence band and conduction band for GO is −6.3 and −3.4 eV, respectively . Whereas the energy value for the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital for RhB is −5.4 and −3 eV, respectively .…”
Section: Resultsmentioning
confidence: 99%
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“…The CE mechanism using the charge transfer is schematically illustrated in Figure b; the excitation of the laser (532 nm) on GO/RGO leads to an increase in the transfer of the electronic charge between the analyte molecules and the GO/RGO sheet through the paths . The energy value of the valence band and conduction band for GO is −6.3 and −3.4 eV, respectively . Whereas the energy value for the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital for RhB is −5.4 and −3 eV, respectively .…”
Section: Resultsmentioning
confidence: 99%
“…41 The energy value of the valence band and conduction band for GO is −6.3 and −3.4 eV, respectively. 42 Whereas the energy value for the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital for RhB is −5.4 and −3 eV, respectively. 43 The presence of the oxygen functional groups is facilitated by an energy level just below the CB of GO, which is easier for the charge transfer from HOMO of RhB to the CB of GO through functional groups-created energy levels.…”
Section: Pl Analysis Of Rhb In Go and The Water Solutionmentioning
confidence: 99%
“…The reported device shows low switching voltage (about ±1 V), tight distributions of HRS and LRS, long retention of more than 10 4 s, and steady endurance performances, which is superior to the GO device. The mechanism of conduction and resistance switching was also studied . Li et al have demonstrated the RS properties of the TiO 2 –CuO composite film.…”
Section: Memristor/memristive Devicementioning
confidence: 99%
“…The mechanism of conduction and resistance switching was also studied. 62 Li et al have demonstrated the RS properties of the TiO 2 −CuO composite film. In this work, they have studied the effect of fatigue fracture on the RS properties of the TiO 2 − CuO film/ITO flexible memristor device.…”
Section: Memristor/memristive Devicementioning
confidence: 99%
“…Up to now, GO/TiO 2 nanoparticle RRAM devices have shown low switching voltage (about ±1 V) [9] and good endurance up to 10 5 cycles and long retention time more than 5 × 10 3 s [10]. Also, excellent large flexibility area without degradation of memory performance for ∼100 cycles has also been reported for GO-based device [11].…”
Section: Introductionmentioning
confidence: 97%