2020
DOI: 10.1002/adma.202006415
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Graphene Oxide for Integrated Photonics and Flat Optics

Abstract: With superior optical properties, high flexibility in engineering its material properties, and strong capability for large‐scale on‐chip integration, graphene oxide (GO) is an attractive solution for on‐chip integration of 2D materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many ap… Show more

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Cited by 157 publications
(177 citation statements)
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References 217 publications
(504 reference statements)
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“…Design of silicon waveguides with integrated graphene oxide films for nonlinear optics Yuning Zhang, Jiayang Wu, Member, IEEE, Yang Qu, Linnan Jia, Baohua Jia, Fellow, OSA and David J. Moss, Fellow, IEEE, Fellow, OSA T To overcome these limitations, two-dimensional (2D) materials that exhibit an ultrahigh optical nonlinearity, such as graphene [80,81], graphene oxide (GO) [82,83], black phosphorus [84,85], and transition metal dichalcogenides (TMDCs) [86,87], have been integrated onto chips to enhance the nonlinear optical performance. Amongst the different 2D materials, GO has become highly promising due to its ease of preparation as well as the flexibility in tuning its material properties [88][89][90][91][92][93][94]. Previously, GO has been shown to have a giant Kerr nonlinearity -about 4 orders of magnitude higher than silicon [92,95].…”
Section: Introductionmentioning
confidence: 99%
“…Design of silicon waveguides with integrated graphene oxide films for nonlinear optics Yuning Zhang, Jiayang Wu, Member, IEEE, Yang Qu, Linnan Jia, Baohua Jia, Fellow, OSA and David J. Moss, Fellow, IEEE, Fellow, OSA T To overcome these limitations, two-dimensional (2D) materials that exhibit an ultrahigh optical nonlinearity, such as graphene [80,81], graphene oxide (GO) [82,83], black phosphorus [84,85], and transition metal dichalcogenides (TMDCs) [86,87], have been integrated onto chips to enhance the nonlinear optical performance. Amongst the different 2D materials, GO has become highly promising due to its ease of preparation as well as the flexibility in tuning its material properties [88][89][90][91][92][93][94]. Previously, GO has been shown to have a giant Kerr nonlinearity -about 4 orders of magnitude higher than silicon [92,95].…”
Section: Introductionmentioning
confidence: 99%
“…In the GO coated segment, the idler power reaches a maximum at L = 4.5 mm due to the trade-off between γ and loss, whereas in the uncoated segment the idler power This further confirms that the enhancement in the Kerr nonlinearity dominates for short film lengths whereas the loss dominates for long GO film lengths. It also provides a criteria for choosing the optimized GO film length in order to maximize the output idler power and hence the CE, and has implications for more advanced photonic integrated circuits [51][52][53] as well as for applications based on SiN and Hydex devices for microwave photonics, data communications, neural networks and many other applications .…”
Section: Discussionmentioning
confidence: 99%
“…Finally, this work could have applications to nonlinear devices [20][21][22][23][24][25][26][27][28][29][30] as well as to microwave photonic chips and integrated quantum optics [64-] where advanced optical filter shapes are extremely useful.…”
Section: Varied Resonance Mode Splittingmentioning
confidence: 99%