2015
DOI: 10.1021/am507342w
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Graphene Oxide–Phosphor Hybrid Nanoscrolls with High Luminescent Quantum Yield: Synthesis, Structural, and X-ray Absorption Studies

Abstract: Highly luminescent graphene oxide (GO)-phosphor hybrid thin films with a maximum quantum yield of 9.6% were synthesized via a simple chemical method. An intense luminescence emission peak at 537 nm and a broad emission peak at 400 nm were observed from the GO-phosphor hybrid films. The maximum quantum yield of the emissions from the hybrid films was found to be 9.6%, which is 48 times higher than that of pristine GO films. The GO-phosphor hybrids were prepared via spin-coating and subsequent postannealing of t… Show more

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Cited by 26 publications
(19 citation statements)
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“…First, the intensity ratio of D and G bands ( I D / I G ) was increased from 0.85 to 1.0 when (ii) non‐ANN‐GO was annealed to be (iii) ANN‐GO . Second, the Raman shift of G band of (ii) non‐ANN‐GO at 1597 cm −1 was redshifted to 1586 cm −1 by forming (iii) ANN‐GO, while a negligible shift was observed in D‐band (Figure S10, Supporting Information) . These Raman spectroscopic results imply that the reduction of GO was occurred while the VOC was formed by the annealing process.…”
Section: Resultsmentioning
confidence: 87%
See 1 more Smart Citation
“…First, the intensity ratio of D and G bands ( I D / I G ) was increased from 0.85 to 1.0 when (ii) non‐ANN‐GO was annealed to be (iii) ANN‐GO . Second, the Raman shift of G band of (ii) non‐ANN‐GO at 1597 cm −1 was redshifted to 1586 cm −1 by forming (iii) ANN‐GO, while a negligible shift was observed in D‐band (Figure S10, Supporting Information) . These Raman spectroscopic results imply that the reduction of GO was occurred while the VOC was formed by the annealing process.…”
Section: Resultsmentioning
confidence: 87%
“…The Φ of (iii) ANN‐GO on V 2 O 5– x /ITO (= 4.97 eV) was measured to be smaller than that of (ii) non‐ANN‐GO on ITO (= 5.3 eV) (Figure a); from the UPS onsets in Figure b, the VBM of (ii) non‐ANN‐GO and (iii) ANN‐GO was measured to be −1.10 and −0.65 eV, respectively . More importantly, the bandgap of GO was found to be reduced from 1.94 to 1.40 eV from ultraviolet–visible absorption spectroscopic analysis (see Figure S12, Supporting Information), suggesting that (iii) ANN‐GO is a partially reduced GO . This result also corroborates the reduction of GO in the ANN‐GO/V 2 O 5– x heterojunction during the annealing process, similar to other literatures.…”
Section: Resultsmentioning
confidence: 92%
“…These rod structures are nothing but rGO sheets that are transformed in to nanoscrolls. This scrolling is a result of the interaction of heavy phosphor particles with rGO sheet during annealing which results in an extremely unfavorable condition for rGO to maintain its planar structure1718. During the annealing of the GO-phosphor composite at high temperatures, along with the removal of functional groups, the phosphor particles are also attached to the rGO sheets.…”
Section: Resultsmentioning
confidence: 99%
“…This is because, the interaction between phosphor particles and rGO renders the planar structure of the rGO sheets extremely unfavorable19. The bending of the rGO sheets is followed by rolling to form scrolls because of Van der Waals attraction and the π-π stacking effect between rGO layers1718. The formation of the nanoscrolls occurs in two steps.…”
Section: Resultsmentioning
confidence: 99%
“…We report highly luminescent GO-phosphor nanoscrolls which have the advantage of both GO and a luminescent phosphor material [13]. The structural and optical characteristics of the hybrids are analyzed in detail.…”
Section: Introductionmentioning
confidence: 99%