Graphene segregated on Ni surfaces and transferred to insulators

Yu, Qingkai; Lian, Jie; Siriponglert, Sujitra; Li, Hao; Chen, Yong; Pei, S. S.

doi:10.1063/1.2982585

Cited by 1,202 publications

(1,020 citation statements)

References 17 publications

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“…However, the produced graphene strongly interacts with the substrate, hindering fabrication of electrically isolated monolayer graphene. On the other hand, CVD growth of graphene on catalytic metals, such as Cu [21] and Ni [17,21,311], is a promising approach for efficient large-scale production of defect-free graphene with controllable number of layers. Moreover, the resulting monolayer graphene can be easily transferred to arbitrary substrates [312].…”

Section: Disorders In Graphene Structurementioning

confidence: 99%

Structure of graphene and its disorders: a review

Gao

Lee

et al. 2018

Science and Technology of Advanced Materials

540

187

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Monolayer graphene exhibits extraordinary properties owing to the unique, regular arrangement of atoms in it. However, graphene is usually modified for specific applications, which introduces disorder. This article presents details of graphene structure, including sp2 hybridization, critical parameters of the unit cell, formation of σ and π bonds, electronic band structure, edge orientations, and the number and stacking order of graphene layers. We also discuss topics related to the creation and configuration of disorders in graphene, such as corrugations, topological defects, vacancies, adatoms and sp3-defects. The effects of these disorders on the electrical, thermal, chemical and mechanical properties of graphene are analyzed subsequently. Finally, we review previous work on the modulation of structural defects in graphene for specific applications.

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Section: Disorders In Graphene Structurementioning

confidence: 99%

Structure of graphene and its disorders: a review

Gao

Lee

et al. 2018

Science and Technology of Advanced Materials

540

187

View full text Add to dashboard Cite

show abstract

“…However, the CVD on metal process is less suitable for device fabrication as the graphene layers must be transferred onto a semiconducting or SI substrate [17]. These transferred graphene layers tend to be both defected and contaminated as a result of the transfer process, thus resulting in graphene which is not suitable for device oriented applications [18].…”

Section: Introductionmentioning

confidence: 99%

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Hassan

Winters

Ivanov

et al. 2015

Carbon

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Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC (0001) The doping of the SiC epilayers may be modified allowing for graphene to be grown on a conducing substrate. Graphene growth was performed via thermal decomposition of the surface of the SiC epilayers under Si background pressure in order to achieve control on thickness uniformity over large area. Monolayer and bilayer samples were prepared through the conversion of a carbon buffer layer and monolayer graphene respectively using hydrogen intercalation process. Micro-Raman and reflectance mappings confirmed predominantly quasi-free-standing monolayer and bilayer graphene on samples grown under optimized growth conditions.Measurements of the Hall properties of Van der Pauw structures fabricated on these layers show high charge carrier mobility (>2000 cm 2 /Vs) and low carrier density (<0.9x10 13 cm -2 ) in quasifree-standing bilayer samples relative to monolayer samples. Also, bilayers on homoepitaxial layers are found to be superior in quality compared to bilayers grown directly on SI substrates.

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“…Many researchers have reported the direct synthesis of large-area single-or multilayer graphene on transition metal substrates by chemical vapor deposition (CVD) [17][18][19][20][21][22]. An advantage of CVD is that graphene can be transferred to other substrates because some transition metals can be etched by acid solution [17,18]. However, the deposition temperatures required for thermal CVD are generally higher than 800°C, and a relatively long deposition time is needed.…”

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confidence: 99%

“…However, large-area graphene is difficult to obtain using adhesive tape, mechanical cleavage and chemical exfoliation [12][13][14]. It has been reported that largearea graphene can be grown epitaxially on single crystal SiC, but SiC substrates are expensive and it is difficult to exfoliate or transfer the graphene from SiC to another substrate because of the strong cohesive strength of the graphene/SiC interface and the extreme chemical stability of SiC [14][15][16][17]. Many researchers have reported the direct synthesis of large-area single-or multilayer graphene on transition metal substrates by chemical vapor deposition (CVD) [17][18][19][20][21][22].…”

mentioning

confidence: 99%

“…It has been reported that largearea graphene can be grown epitaxially on single crystal SiC, but SiC substrates are expensive and it is difficult to exfoliate or transfer the graphene from SiC to another substrate because of the strong cohesive strength of the graphene/SiC interface and the extreme chemical stability of SiC [14][15][16][17]. Many researchers have reported the direct synthesis of large-area single-or multilayer graphene on transition metal substrates by chemical vapor deposition (CVD) [17][18][19][20][21][22]. An advantage of CVD is that graphene can be transferred to other substrates because some transition metals can be etched by acid solution [17,18].…”

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confidence: 99%

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Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

Zhang

Cao

et al. 2012

Chin. Sci. Bull.

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Large-area single-or multilayer graphene of high quality is synthesized on Ni films by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at a relatively low temperature (650°C). In the deposition process, a trace amount of CH 4 gas (2-8 sccm (sccm denotes standard cubic centimeter per minute at STP)) is introduced into the PECVD chamber and only a short deposition time (30-60 s) is used. Single-or multilayer graphene is obtained because carbon atoms from the discharging CH 4 diffuse into the Ni film and then segregate out at its surface. The layer number of the obtained graphene increases when the deposition time or CH 4 gas flow rate is increased. This investigation shows that PECVD is a simple, low-cost, and effective technique to synthesize large-area single-or multilayer graphene, which has potential for application as electronic devices. graphene, PECVD, large-area Citation:Qi J L, Zhang L X, Cao J, et al. Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition.

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Graphene segregated on Ni surfaces and transferred to insulators

Cited by 1,202 publications

References 17 publications

Structure of graphene and its disorders: a review

Structure of graphene and its disorders: a review

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

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