Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

Qi, Junlei; Zhang, Lixia; Cao, Jian; Zheng, Weitao; Wang, Xin; Feng, Jicai

doi:10.1007/s11434-012-5120-4

Cited by 22 publications

(9 citation statements)

References 38 publications

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“…Rapid synthesis RF‐PECVD was revealed as a very powerful technique for the synthesis of large‐scale graphene at relatively low temperature and in a short time . Large‐area single‐ or multilayer graphene of high quality was synthesized on Ni films deposited on a thermally oxidized Si, at a relatively low temperature (650 °C).…”

Section: Towards High‐quality Graphene: Effect Of Experimental Paramementioning

confidence: 99%

Review of CVD Synthesis of Graphene

Muñoz

Gómez‐Aleixandre

2013

Chemical Vapor Deposition

547

315

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Abstract:This article presents an overview of the research highlights in graphene synthesis by Chemical Vapor Deposition (CVD). We discuss the growth mechanisms mainly over transition metals and alloys (with emphasis on Cu and Cu alloys), including new developments and experiments in transfer-free graphene growth on dielectric materials. We focus on the role of the different synthesis parameters, including thermodynamic aspects of the chemical process and physical, chemical and morphological properties of substrate catalyst. We discuss the relation among these parameters and the properties of the as-grown graphene. Some important relations are reviewed and addressed to the influence of the fundamental parameters and methods on the synthesis of high quality graphene.

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Section: Towards High‐quality Graphene: Effect Of Experimental Paramementioning

confidence: 99%

Review of CVD Synthesis of Graphene

Muñoz

Gómez‐Aleixandre

2013

Chemical Vapor Deposition

547

315

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“…Based on the development of plasma technology and requirements of low energy [69], the plasma-enhanced chemical vapor deposition method has been studied [70,71].…”

Section: Plasma-enhanced Chemical Vapor Depositionmentioning

confidence: 99%

Thermal Growth of Graphene: A Review

2018

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A common belief proposed by Peierls and Landau that two-dimensional material cannot exist freely in a three-dimensional world has been proved false when graphene was first synthesized in 2004. Graphene, which is the base structure of other carbon materials, has drawn much attention of scholars and researchers due to its extraordinary electrical, mechanical and thermal properties. Moreover, methods for its synthesis have developed greatly in recent years. This review focuses on the mechanism of the thermal growth method and the different synthesis methods, where epitaxial growth, chemical vapor deposition, plasma-enhanced chemical vapor deposition and combustion are discussed in detail based on this mechanism. Meanwhile, to improve the quality and control the number of graphene layers, the latest research progress in optimizing growth parameters and developmental technologies has been summarized. The strategies for synthesizing high-quality and large-scale graphene are proposed and an outlook on the future synthesis direction is also provided.

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“…Ni which forms a buffer layer for graphene growth has an advantage over Cu because the graphene can be grown at lower temperature [5]. PECVD is alternatively used to enhance graphene growth rate at relatively lower temperatures [6].…”

Section: Introductionmentioning

confidence: 99%