Graphene–Si CMOS oscillators

Gilardi, Carlo; Pedrinazzi, Paolo; Patel, Kishan Ashokbhai; Anzi, Luca; Luo, Birong; Booth, Tim; Bøggild, Peter; Sordan, Roman

doi:10.1039/c8nr07862a

Cited by 6 publications

(5 citation statements)

References 36 publications

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“…These issues arise because graphene has zero bandgap characteristics [3]. Nevertheless, even with much lower , by taking advantage of the graphene's ambipolar conduction, frequency multipliers and oscillators have been successfully demonstrated, proving that GFETs are also suitable for use as the transistor in RF components [18,32,33].…”

Section: Figures Of Merit (mentioning

confidence: 99%

“…Oscillators are used in electronic devices to produce a periodic oscillating signal. Recently, a GFET-based oscillator was developed in 2019 by Gilardi and his research group [18]. The oscillator is realized by integrating a top- gated GFET with an Si CMOS D latch and timing RC circuit.…”

Section: A Oscillatorsmentioning

confidence: 99%

“…One of the best properties of a GFET is its ambipolar characteristics, and it is best used in RF components [10][11][12][13]. To date, several GFET-based RF components have been demonstrated, such as oscillators [14][15][16][17][18][19][20], phase shifters [21,22], amplifiers [23][24][25][26], mixers [27][28][29][30][31], and frequency multipliers [32,33]. A GFET in RF was first demonstrated in 2008 [34], and since then, its performance has gradually improved.…”

Section: Introductionmentioning

confidence: 99%

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Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry.

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Section: Figures Of Merit (mentioning

confidence: 99%

Section: A Oscillatorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Norhakim¹,

Hawari²,

Burhanudin³

2022

IEEE Access

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show abstract

“…Thus in this context, graphene [8][9][10][11][12][13][14] can be envisaged as a potential interconnect which could replace copper. Moreover, graphene is projected to be an excellent candidate material for interconnects due to its high carrier mobility ( × 2 10 5 cm 2 /V-s) 15 , ballistic transport 16 , high current carrying capacity 17 and high thermal conductivity 18 .…”

mentioning

confidence: 99%

Temperature and Size Effect on the Electrical Properties of Monolayer Graphene based Interconnects for Next Generation MQCA based Nanoelectronics

Debroy

Sivasubramani

Vaidya

et al. 2020

Sci Rep

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Graphene interconnects have been projected to out-perform Copper interconnects in the next generation Magnetic Quantum-dot Cellular Automata (MQCA) based nano-electronic applications. In this paper a simple two-step lithography process for patterning CVD monolayer graphene on SiO 2 /Si substrate has been used that resulted in the current density of one order higher magnitude as compared to the state-of-the-art graphene-based interconnects. Electrical performances of the fabricated graphene interconnects were evaluated, and the impact of temperature and size on the current density and reliability was investigated. The maximum current density of 1.18 ×10 8 A/cm 2 was observed for 0.3 μm graphene interconnect on SiO 2 /Si substrate, which is about two orders and one order higher than that of conventionally used copper interconnects and CVD grown graphene respectively, thus demonstrating huge potential in outperforming copper wires for on-chip clocking. The drop in current at 473 K as compared to room temperature was found to be nearly 30%, indicating a positive temperature coefficient of resistivity (TCR). TCR for all cases were studied and it was found that with decrease in width, the sensitivity of temperature also reduces. The effect of resistivity on the breakdown current density was analysed on the experimental data using Matlab and found to follow the power-law equations. The breakdown current density was found to have a reciprocal relationship to graphene interconnect resistivity suggesting Joule heating as the likely mechanism of breakdown.

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“…Huang et al ( 2014 ) constructed a low-temperature hybrid integrated circuit where graphene devices and Si-CMOS circuits integrated together. Gilardi et al ( 2019 ) designed relaxation oscillators using a GFET, Si CMOS D latch, and timing RC circuit. It is observed that the introduction of graphene material in the Si-CMOS logic circuit has improved the circuit complexity and also added other device functionality.…”

Section: Cmos Compatibilitymentioning

confidence: 99%

Graphene-based RRAM devices for neural computing

Das,

Reghuvaran

et al. 2023

Front. Neurosci.

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Resistive random access memory is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to build highly accurate crossbar arrays. Traditional RRAM designs make use of various filament-based oxide materials for creating a channel that is sandwiched between two electrodes to form a two-terminal structure. They are often subjected to mechanical and electrical stress over repeated read-and-write cycles. The behavior of these devices often varies in practice across wafer arrays over these stresses when fabricated. The use of emerging 2D materials is explored to improve electrical endurance, long retention time, high switching speed, and fewer power losses. This study provides an in-depth exploration of neuro-memristive computing and its potential applications, focusing specifically on the utilization of graphene and 2D materials in RRAM for neural computing. The study presents a comprehensive analysis of the structural and design aspects of graphene-based RRAM, along with a thorough examination of commercially available RRAM models and their fabrication techniques. Furthermore, the study investigates the diverse range of applications that can benefit from graphene-based RRAM devices.

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Graphene–Si CMOS oscillators

Abstract: The ambipolarity of graphene is exploited to realize a new class of electronic oscillators by integrating a graphene field-effect transistor with Si CMOS logic.

Cited by 6 publications

References 36 publications

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Temperature and Size Effect on the Electrical Properties of Monolayer Graphene based Interconnects for Next Generation MQCA based Nanoelectronics

Graphene-based RRAM devices for neural computing

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