International audienc

Polarization sensitive and insensitive color filters have important applications in the area of nano-spectroscopy and CCD imaging applications. Metallic nanostructures provide an efficient way to design and engineer ultrathin color filters. These nanostructures have capability to split the white light into fundamental colors and enable color filters with ultrahigh resolution but their efficiency can be restricted due to high losses in metals especially at the visible wavelengths. In this work, we demonstrate all-dielectric color filters based on Si nanoantennas, which are sensitive to incident-wave polarization and, thus, tunable with the aid of polarization angle variation. Two different information can be encoded in two different polarization states in one nanostructure. The nanoantenna based pixels are highly efficient and can provide high quality of colors, in particular, due to low losses in Si at optical frequencies. We experimentally demonstrate that a variety of colors can be achieved by changing the physical size of the nonsymmetric cross-shaped nanoantennas. The proposed devices allow to cover an extended gamut of colors on CIE-1931 chromaticity diagram owing to the existence of high-quality resonances in Si nanoantennas. Significant tunability of the suggested color filters can be achieved by varying polarization angle in both transmission and reflection mode. Additional tunability can be obtained by switching between transmission and reflection modes.

Graphene interconnects have been projected to out-perform Copper interconnects in the next generation Magnetic Quantum-dot Cellular Automata (MQCA) based nano-electronic applications. In this paper a simple two-step lithography process for patterning CVD monolayer graphene on SiO 2 /Si substrate has been used that resulted in the current density of one order higher magnitude as compared to the state-of-the-art graphene-based interconnects. Electrical performances of the fabricated graphene interconnects were evaluated, and the impact of temperature and size on the current density and reliability was investigated. The maximum current density of 1.18 ×10 8 A/cm 2 was observed for 0.3 μm graphene interconnect on SiO 2 /Si substrate, which is about two orders and one order higher than that of conventionally used copper interconnects and CVD grown graphene respectively, thus demonstrating huge potential in outperforming copper wires for on-chip clocking. The drop in current at 473 K as compared to room temperature was found to be nearly 30%, indicating a positive temperature coefficient of resistivity (TCR). TCR for all cases were studied and it was found that with decrease in width, the sensitivity of temperature also reduces. The effect of resistivity on the breakdown current density was analysed on the experimental data using Matlab and found to follow the power-law equations. The breakdown current density was found to have a reciprocal relationship to graphene interconnect resistivity suggesting Joule heating as the likely mechanism of breakdown.

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The effect of position of top metal contact on the electrical transport through individual multiwalled carbon nanotubes (MWNTs) has been investigated using gas injection system in situ in scanning electron microscope to deposit the top platinum metal contacts at different desired sites on the side contacted MWNTs in bridging structure. Current-voltage measurements reveal a significant improvement in electrical properties of the tubes after the top contact is made. This improvement has been found to be independent of position of top contact, i.e., whether the top contact is made on the ends or at any other site of the tube.