2018
DOI: 10.1016/j.carbon.2018.01.078
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Graphene solution-gated field effect transistor DNA sensor fabricated by liquid exfoliation and double glutaraldehyde cross-linking

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Cited by 33 publications
(28 citation statements)
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“…In Figure 4B, the lowest point is corresponding to the charge neutral point (V CNP ), the positively shifted V CNP points with the increasing of V DS are measured by rGO-COOH devices. This is in agreement with our works about liquid exfoliated graphene (LEG) based solution-gated field effect transistor (SgFET) [53]. However, in Figure 4C, V CNP points of rGO-FET are almost un-shaken and maintained at about 0.1 V. Besides, it is found that the pGp based SgFET has no ambipolar feature.…”
Section: Resultssupporting
confidence: 91%
See 1 more Smart Citation
“…In Figure 4B, the lowest point is corresponding to the charge neutral point (V CNP ), the positively shifted V CNP points with the increasing of V DS are measured by rGO-COOH devices. This is in agreement with our works about liquid exfoliated graphene (LEG) based solution-gated field effect transistor (SgFET) [53]. However, in Figure 4C, V CNP points of rGO-FET are almost un-shaken and maintained at about 0.1 V. Besides, it is found that the pGp based SgFET has no ambipolar feature.…”
Section: Resultssupporting
confidence: 91%
“…The basic electronic examinations are executed on unmodified devices (blank) using the measuring setup given in Figure 1C. According to our previous works about GFETs [53], the testing ranges of V GS and V DS are in the range of −0.5–0.5V. The voltage of V DS are swept from −0.5 to +0.5 V, when V GS are maintained at the constant values 0.5, 0.3, 0.1V, respectively, as shown in Figure 4A.…”
Section: Resultsmentioning
confidence: 99%
“…The substrate needs to be modified by glutaraldehyde and LPE graphene was drop-coated on top of the surface. The formation of a continuous film of carbon 2D material required a two times repetition [99]. To enhance the surface area, rGO was drop-casted onto a substrate to be used as channel material, providing a rough carbon layer.…”
Section: Field-effect Transistors and Chemiresistorsmentioning
confidence: 99%
“…In this study, the electrochemical analysis methods which are more cost-effective, have low sensitivity, and have less solvent consumption were applied for detection of IVM residual in BRT buffer solution, in tap water, and in urine sample. Glutaraldehyde or glutardialdehyde is used as a cross-linker for electrode modification in electrochemical sensor studies [ 28 30 ] and allows the sensor material to be immobilized to the electrode surface. İpek [ 31 ] used glutaraldehyde as a sensing element for the analysis of carbaryl pesticide.…”
Section: Introductionmentioning
confidence: 99%