modify graphene properties, is promising for many applications. [3][4][5][6] In this regard, as an efficient approach to tune surface and optical properties, [3] and to alter the chemical reactivity due to the presence of strong strain, [7][8][9] graphene wrinkle can be formed by the collapsing or the folding of graphene geometrically. [10] Furthermore, free of dangling bonds, graphene is an ideal buffer layer for the epitaxial growth of functional materials, which is, however, strongly hindered by the difficulty of surface nucleation. [11,12] With enhanced reactivity, graphene wrinkles would function as the nucleation centers, and facilitate the rapid growth of epitaxial layers. Therefore, to periodically modify the properties and reactivity of graphene, the controllable formation of graphene wrinkle arrays with a high density and defined orientations is highly important. Applying the tension and compression loading [13,14] or substrate engineering [15,16] can be employed to fabricate the wrinkle arrays; however, the target substrates are limited to be the soft ones, such as polymer.Formation of graphene wrinkle arrays can periodically alter the electrical properties and chemical reactivity of graphene, which is promising for numerous applications. However, large-area fabrication of graphene wrinkle arrays remains unachievable with a high density and defined orientations, especially on rigid substrates. Herein, relying on the understanding of the formation mechanism of transfer-related graphene wrinkles, the graphene wrinkle arrays are fabricated without altering the crystalline orientation of entire graphene films. The choice of the transfer medium that has poor wettability on the corrugated surface of graphene is proven to be the key for the formation of wrinkles. This work provides a deep understanding of formation process of transferrelated graphene wrinkles and opens up a new way for periodically modifying the surface properties of graphene for potential applications, including direct growth of AlN epilayers and deep ultraviolet light emitting diodes.