Gravure printed organic rectifying diodes operating at high frequencies

Lilja, Kaisa E.; Bäcklund, Tomas; Lupo, Donald; Hassinen, Tomi; Joutsenoja, Timo

doi:10.1016/j.orgel.2009.04.008

Cited by 55 publications

(40 citation statements)

References 13 publications

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“…There have been highly desirable efforts to develop high-speed Schottky diodes based on metal-oxide semiconductors 10 , organic semiconductors [11][12][13][14] and conventional semiconductors [15][16][17] . Most of these were on glass substrates, for example, pentacene and C 60 pin diodes working as rectifiers up to 300 MHz 18 ; organic pentacene Schottky diodes operating up to 870 MHz 19 ; diodes based on C 60 and tungsten oxide showing a cut-off frequency of 800 MHz 20 .…”

mentioning

confidence: 99%

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

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mentioning

confidence: 99%

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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“…Utilization of printing techniques for the fabrication of organic diodes leads to many technical challenges including the loss of molecular order that is a prerequisite for high mobility. State-ofthe-art printed organic diodes operate below 10 MHz (7).…”

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confidence: 99%

All-printed diode operating at 1.6 GHz

Sani

Robertsson

Cooper

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

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Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here, we report an all-printed diode operating up to 1.6 GHz. The device, based on two stacked layers of Si and NbSi 2 particles, is manufactured on a flexible substrate at low temperature and in ambient atmosphere. The high charge carrier mobility of the Si microparticles allows device operation to occur in the charge injection-limited regime. The asymmetry of the oxide layers in the resulting device stack leads to rectification of tunneling current. Printed diodes were combined with antennas and electrochromic displays to form an all-printed e-tag. The harvested signal from a Global System for Mobile Communications mobile phone was used to update the display. Our findings demonstrate a new communication pathway for printed electronics within IoT applications.

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“…A further increase in the Schottky barrier is observed, as depicted in figure 4(c). Due to the higher Schottky barrier, even fewer charge carriers are able to flow from the copper to the semiconductor under reverse bias and the reverse current is further lowered, leading to a higher rectification ratio of 10 5 . However, as argued in the previous work [7], in forward bias the field is still high enough to assist tunnelling through the barrier, as illustrated in figure 4(d) and (e).…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, a thin interfacial barrier layer was found to prevent hole injection from the cathode electrode into the organic semiconductor under reverse bias without having a significant effect on the forward bias current, leading to a higher rectification ratio. It is unlikely that the observed Schottky barrier of 0.1 to 0.3 eV, albeit combined with a tunnelling barrier, could completely explain rectification ratios of 10 3 to 10 5 .…”

Section: Introductionmentioning

confidence: 98%

“…Previously, high-throughput gravure printing processes have been demonstrated for organic light emitting diodes and transistors [1][2][3][4]. Also, gravure printed organic Schottky diodes have been demonstrated as RFID rectifiers and as the active components in display driving circuitry [5,6]. In these applications, the organic diode needs to exhibit a sufficient rectification ratio and forward current.…”

Section: Introductionmentioning

confidence: 99%

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Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes

Lilja

Majumdar

Lahtonen

et al. 2011

J. Phys. D: Appl. Phys.

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To cite this version:K E Lilja, H S Majumdar, K Lahtonen, P Heljo, S Tuukkanen, et al.. Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44 (29) Author to whom any correspondence should be addressed.Abstract. Rectification ratios of 10 5 were observed in printed organic copper/polytriarylamine (PTAA)/silver diodes with a thin insulating barrier layer at the copper/PTAA interface. To clarify the origin of the high rectification ratio in the diodes, the injection, transport and structure of the diodes with two different copper cathodes were examined using impedance spectroscopy and X-ray photoelectron spectroscopy (XPS). The impedance data confirm that the difference in diode performance arises from the copper/PTAA interface. The XPS measurements show that the copper surface in both diode structures is covered by a layer of Cu 2 O topped by an organic layer. The organic layer is thicker on one of the surfaces, which results in lower reverse currents and higher rectification ratios in the printed diodes. We suggest a model where a dipole at the dual insulating layer induces a shift in the semiconductor energy levels explaining the difference between the diodes with different cathodes.

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Gravure printed organic rectifying diodes operating at high frequencies

Cited by 55 publications

References 13 publications

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

All-printed diode operating at 1.6 GHz

Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes

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