2011
DOI: 10.1088/0022-3727/44/29/295301
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Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes

Abstract: To cite this version:K E Lilja, H S Majumdar, K Lahtonen, P Heljo, S Tuukkanen, et al.. Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44 (29) Author to whom any correspondence should be addressed.Abstract. Rectification ratios of 10 5 were observed in printed organic copper/polytriarylamine (PTAA)/silver diodes with a thin insulating barrier layer at the copper/PTAA interface. To clarify … Show more

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Cited by 11 publications
(9 citation statements)
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“…ZnO is a "rediscovered" semiconductor receiving remarkable interest on behalf of its unique merits and promising technological applications. Currently, the flexible diodes are all fabricated below 200 °C, using either low-temperature-synthesized oxide [27][28][29][30][31][32][33][34][35] and organic [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51] materials or high-temperature-prepared Si [52][53][54][55][56][57][58][59][60][61][62][63] and Ge [64] materials combined with transfer method [65], as summarized in Figure 1. The highest reverse voltage or breakdown voltage (Vb) of these flexible diodes are no more than 20 V, with an exception in References 55 and 59 where flexible single-crystalline Si wafers (30 μm thick) were used as the active layers.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO is a "rediscovered" semiconductor receiving remarkable interest on behalf of its unique merits and promising technological applications. Currently, the flexible diodes are all fabricated below 200 °C, using either low-temperature-synthesized oxide [27][28][29][30][31][32][33][34][35] and organic [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51] materials or high-temperature-prepared Si [52][53][54][55][56][57][58][59][60][61][62][63] and Ge [64] materials combined with transfer method [65], as summarized in Figure 1. The highest reverse voltage or breakdown voltage (Vb) of these flexible diodes are no more than 20 V, with an exception in References 55 and 59 where flexible single-crystalline Si wafers (30 μm thick) were used as the active layers.…”
Section: Introductionmentioning
confidence: 99%
“…It can be seen that the amount of charge delivered to the supercapacitor is negligible when the output voltage generated by the energy source is below 2 V. To get the diodes in their conducting state, the piezoelectric element has to provide at least this much voltage. This is a challenge considering energy harvesting in low-force applications, since the surface-charge density in the PVDF films is directly proportional to the applied stress, according to (5).…”
Section: Resultsmentioning
confidence: 99%
“…The gravure printing method used to fabricate the diodes was adapted from earlier work [5]. The diodes were used to form a passive rectifier circuit used in voltage doubler configuration [13].…”
Section: B Rectifying Diode Circuitmentioning
confidence: 99%
See 1 more Smart Citation
“…[1,7] These are diodes based on interfacial barrier layers. [1,7,8,9,10] In the inorganic metal-insulatorsemiconductor (MIS) devices where the conventional insulating silicon dioxide (SiO 2 ) thickness is below 7 nm, the charge carriers can tunnel through the insulating barrier. [11] In MIS diodes, this causes a reduction in the reverse saturation current and an increase in the barrier height as shown in Figure 2.…”
Section: Introductionmentioning
confidence: 99%