Great improvement in IGBT turn-on characteristics with Trench Oxide PiN Schottky (TOPS) diode

Nemoto, M.; Otsuki, M.; Kirisawa, M.; Seki, Y.; Naito, Tomoyuki; Gupta, Ratnesh; Winterhalter, C.; Chang, H.-R.

doi:10.1109/ispsd.2001.934616

Cited by 8 publications

(2 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This approach reduces the hole injection and lowers the carrier concentration at the p-n junction side. A variation of this approach is the trench oxide PiN Schottky [51] in which the p-regions are performed at the bottom of trench cells while the Schottky contact is at the surface. In both approaches, the area of layers injecting holes is reduced and, consequently, the free carrier densities at the p-n junction side are lowered.…”

Section: Power Rectifiersmentioning

confidence: 99%

See 1 more Smart Citation

A Review of Si MOS-gated Power Switches and PiN Rectifiers

et al. 2012

View full text Add to dashboard Cite

Original scientific paperRevolutionary advances and developments have been made in power semiconductor device technologies during the last decades which have allowed the improvement of power electronic systems in terms of their efficiency and reliability. The advent of MOS-gated power switches such as the power MOSFET and the IGBT showing high input impedance has been a real breakthrough in the design and fabrication of power electronic systems. This paper reviews the recent progress in the development of Si MOS-gated power devices and rectifiers. The evolution of these devices' technologies together with the introduction of revolutionary device concepts is also discussed. Concretely, the introduction of trench technologies for power MOSFETs and the use of the super-junction concept for breaking the 1D-silicon limit are highlighted. Developments in IGBTs such as those based on the use of thin wafers and strategies for optimising the plasma distribution in PT IGBTs during the on-state are also addressed. Finally, advances in PiN diode technologies including new concepts for both the anode and the cathode structures are also reviewed. These approaches have allowed the reduction of the PiN total losses and a soft reverse recovery behaviour, leading to a more rugged device.Key words: MOS-gated power devices, power MOSFETs, CoolMOS, super-junction devices, IGBTs, PiN rectifiers Prikaz stanja silicijevih MOS upravljanih učinskih sklopova i PiN ispravljača. U posljednjim desetljećima svjedočimo razvoju sustava učinske elektronike u pogledu povećanja efikasnosti i pouzdanosti. Napredak je omogućen zahvaljujući izvanrednom napredku koji je postignut na području učinskih poluvodiča. Pojava MOS upravljanih učinskih sklopova s visokom ulaznom impedancijom, kao što su MOSFET i IGBT, rezultirao je probojem u projektiranju i proizvodnji sustava učinske elekronike. Ovajčlanak daje uvid u napredak koji je u posljednje vrijeme ostvaren u razvoju silicijeve MOS upravljane učinske elektronike i ispravljača. Uz dosadašnji razvoj tehnologije navedenih komponenata, učlanku je uključen i osvrt na revolucionarne koncepte budućeg razvoja. Konkretno, u radu su objašnjene tehnologija rova za MOSFET i korištenje koncepta super spoja za probijanje granice jednodimenzionalnog silicija. Razmatrana su i poboljšanja IGBT-ova koja se baziraju na uporabi tankih pločica a strategijama optimiranja distribucije plazme u PT IGBT-ovima za vrijeme aktivnog stanja. Konačno, prikazan je i napredak u tehnologiji PiN dioda koji uključuje nove strukturalne koncepte katode i anode. Ovi pristupi su omogućili smanjenje ukupnih gubitaka PiN diode i blagu dinamiku reverznog oporavka, što rezultira povećanjem robusnosti sklopa.

show abstract

Section: Power Rectifiersmentioning

confidence: 99%

“…Fig. 9: Schematic cross-section of the trench oxide pin Schottky diode [51] There are also other concepts for getting the desired plasma distribution without using anode structures for reducing the area of hole injection. One is based on the use of a local recombination centre profile close to the panode.…”

Section: Power Rectifiersmentioning

confidence: 99%

A Review of Si MOS-gated Power Switches and PiN Rectifiers

et al. 2012

View full text Add to dashboard Cite

show abstract

pin Diodes

Lutz¹,

Schlangenotto²,

Scheuermann³

et al. 2018

Semiconductor Power Devices

View full text Add to dashboard Cite

1200V super low loss IGBT module with low noise characteristics and high dI/dt controllability

Onozawa

Otsuki

Iwamuro

et al.

Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005.

View full text Add to dashboard Cite

This paper presents the superior characteristics of newly developed low loss and low noise 1200V IGBT module for the first time. In order to realize low noise emission, it is necessary not only to improve the reverse recovery characteristics of FWD but also to reduce the low current turnon dI/dt of IGBT. New IGBT chip with high turn-on dI/dt controllability and low turn-on power dissipation has been successfully developed by the reduction of the Miller capacitance by the optimization of the surface structure. A 1200V-450A IGBT module which is installed the new IGBT and an optimized FWD chips has been able to realize 30% reduction of the switching power dissipation compared with the conventional IGBT module under the conditions to have the same noise emission characteristics.

show abstract

Great improvement in IGBT turn-on characteristics with Trench Oxide PiN Schottky (TOPS) diode

Cited by 8 publications

References 8 publications

A Review of Si MOS-gated Power Switches and PiN Rectifiers

A Review of Si MOS-gated Power Switches and PiN Rectifiers

pin Diodes

1200V super low loss IGBT module with low noise characteristics and high dI/dt controllability

Contact Info

Product

Resources

About