Green Emission from Tb-Doped GaN Grown by MOVPE

Hara, Kazuhiko; Ohtake, N.; Ishii, Kiyoshi

doi:10.1002/(sici)1521-3951(199911)216:1<625::aid-pssb625>3.0.co;2-k

Cited by 38 publications

(26 citation statements)

References 6 publications

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“…RE dopants in GaN are alternative sources of visible light emission particularly for green light other than the prime source InGaN in order to avoid the problems related to the growth of InGaN with high In content. [7][8][9][10][11][12][13][14] The synthesis of Nd doped GaN by plasma-assisted molecular beam epitaxy was reported by Readinger et al 15 Metcalfe et al studied the optical characterization of Nd 3þ emission spectra 16 and Gruber et al studied the stark levels of Nd doped GaN. 17 All these efforts along with further future investigations could lead to the further development of first pumped Nd doped GaN laser diode which will have highest laser efficiency because of pumping action.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure analysis of rare earth ions Ce and Nd doped gallium nitride

Dar

Majid

2013

Journal of Applied Physics

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Articles you may be interested inThe electronic structure changes and the origin of the enhanced optical properties in N-doped anatase TiO2-A theoretical revisitFirst-principles study of the electronic structure and optical properties of Ce-doped ZnO First principle calculations on electronic structure of Rare Earth ions Ce and Nd doped GaN are presented. Band gap narrowing, optical transitions, and hybridization of impurity states with the host are discussed. The dopants introduced 4f states in the band gap of the doped material in such a way that RE Ga isoelectronic traps facilitate the optical transitions in RE:GaN. The observed formation of intermediate bands and impurity levels in band gap of host material predicted it to be excellent candidate for the future solar cell generation and other optoelectronic devices. V C 2013 AIP Publishing LLC. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Electronic structure analysis of rare earth ions Ce and Nd doped gallium nitride

Dar

Majid

2013

Journal of Applied Physics

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“…These materials are regarded as important materials in the application for optical fiber communications, display devices, and high efficiency lighting. There are several reports regarding infrared or visible light emissions from various RE (Er 3C : infrared and green; Tb 3C : green; Tm 3C : blue; Sm 3C , Pr 3C , Eu 3C : red) ions in GaN [6][7][8][9][10][11][12][13][14][15], and electroluminescence of red, green and blue color from MIS structures have been demonstrated [12,14,15]. Among RE dopants, Europium (Eu) is an attractive element in GaN, since it shows a strong red-emission at 622 nm [12] which is hard to obtain by using InGaN as an active layer material due to serious phase separation [16].…”

Section: Introductionmentioning

confidence: 99%

Optical processes of red emission from Eu doped GaN

Sawahata

Bang²,

Seo

et al. 2005

Science and Technology of Advanced Materials

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A single crystalline Eu-doped GaN was grown by gas-source molecular beam epitaxy and photoluminescence (PL) properties were studied. The PL spectra show red-emission at 622 nm originating from intra 4f-4f transition of Eu 3C ion without band-edge emission of GaN. The peak shift of the red-emission with the temperature variation from 77 K to room temperature is less than 1.6 meV, and thermal quenching of the luminescence was found to be small compared with the band-to-band transition. Fourier transform infrared spectra showed an absorption peak at about 0.37 eV, which may be due to a deep defect level. The intensity of the red luminescence and the defect-related absorption peak increased with increasing Eu concentration, and a close correlation in the intensity was observed between them. These results suggest that the deep defect level plays an important role in the radiative transition of Eu 3C ion in GaN and the optical process for the luminescence at 622 nm was discussed with the relation to the defect. q

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“…Thus, doping with Eu, Sm, or Pr ͑red͒, Er ͑green and infrared͒, Tb or Ho ͑green͒, and Tm ͑blue͒ could provide an alternative solution for full-color light-emitting diodes. [1][2][3][4][5][6][7][8] The band gap of the ͑In͒GaN host is wide enough to allow RE transitions, in the whole visible range. However, the RE radiative quantum efficiency strongly depends on the carriermediated energy transfer process, which has to compete with fast nonradiative recombination channels.…”

Section: Introductionmentioning

confidence: 99%

Optical and morphological properties ofGaNquantum dots doped withTm

et al. 2005

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We report on optical and structural properties of wurtzite-phase Tm-doped GaN quantum dots ͑QDs͒ embedded in an AlN matrix, grown by plasma-assisted molecular beam epitaxy. The influence of Tm on the size and shape of the QDs is analyzed. The optical properties are studied using cathodoluminescence and photoluminescence. Intra-4f-Tm transitions from the 1 D 2 level show constant temperature behavior from 10 K to room temperature. The internal electric field and strains in the QDs yield a redshift and an additional broadening of the lines. We demonstrate that Tm atoms are partially located in the GaN QDs and partially at the GaN/ AlN interface.

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Green Emission from Tb-Doped GaN Grown by MOVPE

Cited by 38 publications

References 6 publications

Electronic structure analysis of rare earth ions Ce and Nd doped gallium nitride

Electronic structure analysis of rare earth ions Ce and Nd doped gallium nitride

Optical processes of red emission from Eu doped GaN

Optical and morphological properties ofGaNquantum dots doped withTm

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