Green lasers based on CdSe/ZnSe nanostructures pumped by electron beams with energies below 10 keV

Зверев, М. М.; Гамов, Н. А.; Жданова, Е. В.; Peregudov, D. V.; Студенов, В. Б.; Иванов, С. В.; Sedova, I. V.; Sorokin, Sergey; Gronin, S. V.; Kop’ev, P. S.

doi:10.1134/s1063785007120140

Cited by 19 publications

(8 citation statements)

References 4 publications

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“…Using of lowdimensional heterostructures with short-period superlattice (SL) waveguide and single CdSe/ZnSe quantum dot (QD) active region resulted in room-temperature lasing at E e < 5 keV with the extremely low threshold current density j th = 0.4-0.5 A/cm 2 (E e = 8-10 keV) [2]. The quantum efficiency of ≈ 4% as well as light output power of > 10 W (per facet) have been achieved in a laser structure with extended (0.4 µm thick) SL waveguide and three ZnSe/CdSe QD sheets [3].…”

Section: Introductionmentioning

confidence: 99%

Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping

et al. 2008

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The characteristics of ZnSe-based electron beam pumped semiconductor lasers are presented in detail. The laser structures consist of a 0.6 µm thick superlattice waveguide centered with ten equidistantly placed CdSe/ZnSe quantum dot active layers. The maximum light output pulse power of 12 W per facet at room temperature along with an extremely high quantum efficiency of ≈ 8.5% were obtained at an electron beam pumping energy of 23 keV (the laser wavelength is of 542 nm). The calculations of a spatial distribution of non-equilibrium carrier concentration within the semiconductor structures under electron beam pumping are presented. The possible ways of further improvement of laser efficiency are discussed.

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Section: Introductionmentioning

confidence: 99%

Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping

et al. 2008

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“…The using of GIW seems to be an efficient way to improve degradation stability and increase the output power of EBP laser heterostructures. In spite of relatively high threshold current density in comparison with the best results [1], the output power of 8.5 W per facet has been obtained at electron beam energy and current density of 16 kV and 4.9 A/cm 2 . An improvement in the hole transport to the active region due to the proper GIW design is expected to result in reduced threshold current density at low E e .…”

Section: Discussionmentioning

confidence: 73%

“…Figure 5 demonstrates the dependencies of the pulsed output power on electron beam current for the structure #A measured for different values of E e . In spite of twice larger J th in comparison with best results [1], the GIW laser structure #A demonstrates the highest value of output power ~8.5W per facet (E e =16 kV and J=4.9 A/cm 2 ) among the structures with a single QW active region. The samples with cavity lengths of 0.6 mm and 1.1 mm were studied.…”

Section: Figurementioning

confidence: 77%

“…The specific advantages of EBP lasers are the wide-range frequency modulation of the light output power, the electronic control of a directivity diagram, and synchronization of light and pump pulses at a level of a fraction of nanoseconds. During the last decade the extremely low threshold current density (J th =0.4-0.5 A/cm 2 at E e =5-12 kV) and high efficiency ZnSe-based laser structures were grown by molecular beam epitaxy (MBE) [1]. The quantum efficiency of ~8.5% as well as light output power of ~12 W (per facet) have been achieved in laser structure with 0.65-μm-thick superlattice (SL) waveguide and ten ZnSe/CdSe quantum dot (QD) sheets [2].…”

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confidence: 99%

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ZnSe‐based laser structures for electron‐beam pumping with graded index waveguide

Gronin¹,

Sorokin

Sedova

et al. 2010

Phys. Status Solidi (c)

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Electron beam pumped (EBP) laser heterostructures with graded index waveguide (GIW) have been grown by molecular beam epitaxy and studied in detail. The maximum achieved output pulse power per facet is as high as 8.5 W at an electron beam energy of 16 kV. No saturation of output power with the increase of electron beam current as well as no suitable degradation of GIW EBP laser structures have been observed. The ways for further optimizations of GIW heterostructures are discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Compact ZnCdSe/ZnSe/ZnSSe/ZnMgSSe quantum dot (QD) lasers pumped by an e-beam [1] or by a violet III-N laser diode (LD) [2] have rather high efficiency and slow degradation rate in comparison with II-VI laser diodes. It is expected that the use of electronicallycoupled multiple QD sheets in the active region of such lasers will enable us to reduce laser threshold and to improve noticeably various laser characteristics.…”

mentioning

confidence: 99%

Internal parameters and optical properties of green II‐VI heterostructure lasers with active region composed of multi‐sheet electronically‐coupled CdSe quantum dots

Vainilovich

Луценко

Tarasuk

et al. 2010

Phys. Status Solidi (c)

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Optically pumped green‐emitting ZnSe‐based laser heterostructures of optimized design have been grown by molecular‐beam epitaxy and studied. The structures containing five electronically‐coupled stacked CdSe quantum dot (QD) sheets demonstrate the minimum threshold power density of 2.2 kW/cm2 and the maximum external quantum efficiency of ∼ 50%. Internal laser characteristics were determined by measuring the differential laser efficiency and laser threshold of a series of samples with different cavity lengths. The characteristic gain and internal quantum efficiency of the structures have been shown to reach the values as high as ΓG0 = 114 cm‐1 and ηi = 65.4%, while the transparency threshold and internal losses are evaluated as low as IT = 1.22 kW/cm2 and αi = 2.55 cm‐1, respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Green lasers based on CdSe/ZnSe nanostructures pumped by electron beams with energies below 10 keV

Cited by 19 publications

References 4 publications

Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping

Effective Green Semiconductor Lasers with Multiple CdSe/ZnSe QD Active Region for Electron Beam Pumping

ZnSe‐based laser structures for electron‐beam pumping with graded index waveguide

Internal parameters and optical properties of green II‐VI heterostructure lasers with active region composed of multi‐sheet electronically‐coupled CdSe quantum dots

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