Green Photoluminescence from GaInN Photonic Crystals

Kitagawa, Hitoshi; Suto, Toshihide; Fujita, Masayuki; Tanaka, Yoshinori; Asano, Tanemasa; Noda, Susumu

doi:10.1143/apex.1.032004

Cited by 33 publications

(22 citation statements)

References 20 publications

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“…Thus, a conservative 1-ns minority carrier lifetime is assumed and held constant over the entire composition range for fair comparisons of device designs. According to experimental measurements [28]- [30], a front surface recombination velocity of 10 4 cm/s is used. The interface charge density induced by spontaneous and piezoelectric polarizations is calculated with the method developed by Fiorentini et al [31].…”

Section: A Simulation Parametersmentioning

confidence: 99%

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Fabien

Moseley

Doolittle

et al. 2014

IEEE J. Photovoltaics

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Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ∼11%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.

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Section: A Simulation Parametersmentioning

confidence: 99%

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Fabien

Moseley

Doolittle

et al. 2014

IEEE J. Photovoltaics

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“…The optical recombination model with the optical parameter of 3 × 10 −11 cm 3 s −1 is used and Auger recombination model with Auger parameter of electrons (holes) is assumed to be 10 −30 cm 6 s −1 . The simulations take also account of surface recombination losses at different heterointerfaces, the surface recombination velocity is taken equal to 10 4 cm s −1 and the Fermi–Dirac statistics is taken in all the simulations . Atlas‐Silvaco simulations use an input optical file containing the wavelength‐dependent refractive index n ( λ ) and extinction coefficient k ( λ ) for the different materials .…”

Section: Photodiode Structure and Numerical Simulationmentioning

confidence: 99%

Design and Simulation of InGaN/GaN p–i–n Photodiodes

Elbar

Alshehri

Tobbeche

et al. 2018

Physica Status Solidi (a)

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InGaN ternary alloys with their band gaps varying from 0.7 to 3.4 eV, are very promising for photodetector devices operating from UV to IR wavelength range. Using Silvaco–Atlas software, an In0.1Ga0.9N/GaN based p–i–n photodiode is designed and the J–V characteristics, the spectral responsivity, the frequency response and the cut‐off frequency as a function of InGaN thickness are studied. The photodiode exhibits a high reverse breakdown voltage of 38 V, a peak responsivity of 0.2 A W−1 at 0.343 μm wavelength and a cutoff frequency of 400 MHz under an applied reverse bias voltage of 2 V and for a 0.1 μm i‐InGaN layer, in good agreement with simulated and experimental results found in literature. It is found that an optimum i‐layer thickness of 1.5 μm for the maximum cutoff frequency of 4 GHz attributed to the predominance of the limitation in capacitance effect on the cutoff frequency at low i‐layer thickness and the transit time on the cuttoff frequency for high i‐layer thickness. For this i‐layer thickness, the highest peak responsivity about 0.244 A W−1 at 0.384 μm wavelength is achieved.

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“…The carrier lifetime, which is strongly related to defect-induced recombination, is estimated from the fast decay component in the TR-PL spectrum. 33 Figure 3a shows that the carrier lifetimes for a planar LED and PhC LEDs without and with sulfide passivation are 8.1, 2.7, and 4.0 ns, respectively. This result indicates that the surface recombination velocities of PhC LEDs are changed by sulfide treatment of the PhCs.…”

mentioning

confidence: 99%

Enhancement of Optical Output Power of Light-Emitting Diodes with Photonic Crystals in InGaN/GaN Multiple Quantum Wells by Sulfide Passivation

Leem

Lee

Park

et al. 2014

ECS J. Solid State Sci. Technol.

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We investigate blue light-emitting diodes (LEDs) containing photonic crystals (PhCs) that are fabricated in InGaN/GaN multiple quantum wells by plasma etching. Sulfide passivation of the etched surfaces in the LEDs using thioacetamide/ammonium solution effectively reduces the content of surface defects that induce defect-related recombination and the reverse leakage current through the sidewall surface of PhCs. Sulfide passivation enhances the optical output power of the PhC LEDs by 71% at 20 mA compared with that of planar LEDs. The large enhancement of optical power is attributed to out-coupling of confined light by the PhCs and the effective recovery of internal quantum efficiency by sulfide passivation.

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Green Photoluminescence from GaInN Photonic Crystals

Cited by 33 publications

References 20 publications

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells

Design and Simulation of InGaN/GaN p–i–n Photodiodes

Enhancement of Optical Output Power of Light-Emitting Diodes with Photonic Crystals in InGaN/GaN Multiple Quantum Wells by Sulfide Passivation

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