Green ThinGaN power‐LED demonstrates 100 lm

Peter, M.; Laubsch, A.; Stauß, P.; Walter, Arnaud; Baur, J.; Hahn, B.

doi:10.1002/pssc.200778554

Cited by 38 publications

(31 citation statements)

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“…It should be noted that in an MQW structure under PL excitation, electron-hole pairs are generated in the whole structure, whereas under EL excitation, the generated carriers are mostly distributed in the QW nearest the p-layer. 44,52 For InGaN QW structures, it is well-known that TDs strongly affect IQE as they can act as non-radiative recombination centres. 25,[53][54][55] However, it has been found that a strong ELOC can effectively reduce the QW excitons from being trapped into TDs, resulting in an enhanced luminescence efficiency from InGaN based devices.…”

Section: Discussionmentioning

confidence: 99%

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Dinh

Corbett

Parbrook

et al. 2016

Journal of Applied Physics

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We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (112¯2) GaN substrate (Bulk-GaN) and a low-cost large-size (112¯2) GaN template created on patterned (101¯2) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼105 cm−2–106 cm−2 and basal-plane stacking fault (BSF) density of 0 cm−1, while the PSS-GaN substrate has the TDD of ∼2 × 108 cm−2 and BSF density of ∼1 × 103 cm−1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density.

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Section: Discussionmentioning

confidence: 99%

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Dinh

Corbett

Parbrook

et al. 2016

Journal of Applied Physics

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“…For comparison, a 8-fold MQW structure with integral InGaN active layer thickness comparable to the 20 nm thick SQW has been grown and optimized for optimal MQW operation. It has been shown seperately that several QWs are emitting in this LED (compare [9]). The epitaxial wafers have been processed using OSRAM Opto Semiconductors ThinGaN R -technology.…”

Section: Methodsmentioning

confidence: 95%

“…Consequently, the realization of LED-structures with decreased quantum well carrier density should be a promising concept for new devices with improved high current saturation. To reduce carrier density, it has been suggested to use thick InGaN QWs [7] [8], to enable multi-quantum-well (MQW) operation [9] or to improve carrier injection using polarization matched AlGaInN QW-barriers [10]. In this paper, we elucidate the mechanisms of recombination in thick InGaN quantumwells.…”

mentioning

confidence: 99%

Luminescence properties of thick InGaN quantum‐wells

Laubsch

Bergbauer

Sabathil

et al. 2009

Phys. Status Solidi (c)

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In this paper, we discuss the physics of recombination in thick InGaN quantum-well (QW) based structures. Thick InGaN QWs have been suggested as one concept to reduce the typical decrease of internal efficiency of InGaN based light emitters towards high current densities. We show that at typical operation current densities, recombination in such thick QWs mainly originates from excited QW-states, which exhibit good electron hole overlap and large spatial extent, enabling a reduction of carrier density. We identify these states by comparing current dependent electroluminescence spectra to band structure simulations. The reduction of carrier density is verified by measuring current dependent carrier lifetimes. We find that saturation of efficiency is reduced for increasedQWthickness. However, the same effect can also be achieved using an MQW structure optimized for real MQW emission. We conclude that regardless of the employed concept, a decrease in carrier density is central to improve the high current efficiency of InGaN based light emitters

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“…Experimental information about carrier distributions can be obtained from quantum well structures with different indium content in each of the InGaN quantum wells: each well then emits its own characteristic color. [3][4][5][6][7] In this way one can also monitor how a carrier distribution evolves with increasing bias current. The factors that determine the carrier transport between quantum wells are the effective mass of the carriers, and the height and thickness of the barriers, both in the conduction band and in the valence band.…”

mentioning

confidence: 99%