Grinding of silicon wafers: A review from historical perspectives

Pei, Zhijian; Fisher, Graham R.; Liu, J.

doi:10.1016/j.ijmachtools.2008.05.009

Cited by 159 publications

(51 citation statements)

References 32 publications

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“…Furthermore, the abrasive processes will cause surface flatness deviation due to its uncontrollable material removal resulting in the machined profile inaccuracy [2]. Therefore, after grinding and lapping processes, the chemical-mechanical polishing (CMP) is essential to remove the subsurface damage layer caused by the hard abrasive particles, which makes a very costly production [3]. Also, these abrasive processes especially like CMP are extremely slow, whiles grinding and lapping processes would impart subsurface damage leading to a degraded surface integrity [4].…”

Section: Introductionmentioning

confidence: 99%

A review on ductile mode cutting of brittle materials

2018

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Brittle materials have been widely employed for industrial applications due to their excellent mechanical, optical, physical and chemical properties. But obtaining smooth and damage-free surface on brittle materials by traditional machining methods like grinding, lapping and polishing is very costly and extremely time consuming. Ductile mode cutting is a very promising way to achieve high quality and crack-free surfaces of brittle materials. Thus the study of ductile mode cutting of brittle materials has been attracting more and more efforts. This paper provides an overview of ductile mode cutting of brittle materials including ductile nature and plasticity of brittle materials, cutting mechanism, cutting characteristics, molecular dynamic simulation, critical undeformed chip thickness, brittle-ductile transition, subsurface damage, as well as a detailed discussion of ductile mode cutting enhancement. It is believed that ductile mode cutting of brittle materials could be achieved when both crack-free and no subsurface damage are obtained simultaneously.

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Section: Introductionmentioning

confidence: 99%

A review on ductile mode cutting of brittle materials

2018

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“…The thinned wafers are transferred using a carrier wafer, following which the thin membrane is eventually removed. [112] In addition, thin Si-based devices and nanomembranes can also be achieved by chemical etching of SOI (Si on Insulator) wafer. Chemical etching of Si can be achieved either via both dry and wet etching process.…”

Section: Ultra-thin Silicon Chipsmentioning

confidence: 99%

New materials and advances in making electronic skin for interactive robots

et al. 2015

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Flexible electronics has huge potential to bring revolution in robotics and prosthetics as well as to bring about the next big evolution in electronics industry. In robotics and related applications, it is expected to revolutionise the way with which machines interact with humans, real-world objects and the environment. For example, the conformable electronic or tactile skin on robot's body, enabled by advances in flexible electronics, will allow safe robotic interaction during physical contact of robot with various objects. Developing a conformable, bendable and stretchable electronic system requires distributing electronics over large non-planar surfaces and movable components. The current research focus in this direction is marked by the use of novel materials or by the smart engineering of the traditional materials to develop new sensors, electronics on substrates that can be wrapped around curved surfaces. Attempts are being made to achieve flexibility/stretchability in e-skin while retaining a reliable operation. This review provides insight into various materials that have been used in the development of flexible electronics primarily for e-skin applications.

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“…Although well accepted in silicon wafer foundry, CMP has extremely low efficiency on material removal, the CMP solution can cause pollution to environment, and the process is difficulty to be automated [9,10]. Those disadvantages become more severe with the increased wafer size [11,12]. Therefore, it is necessary to develop new surface planarization process, which could overcome those drawbacks.…”

Section: Introductionmentioning

confidence: 99%

Surface integrity and removal mechanism of chemical mechanical grinding of silicon wafers using a newly developed wheel

Dong

Gao

Huang

et al. 2015

Int J Adv Manuf Technol

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A chemical mechanical grinding (CMG) wheel was developed for planarization of silicon wafers, which consists of magnesium oxide (MgO) abrasives and calcium carbonate (CaCO 3 ) additives, mixed with 25 % weight percentage of magnesium chloride (MgCl 2 ) solution. It was shown that chemical reactions occurred during the grinding process, which formed a softened layer on the top of silicon substrate. The reactants could be much more easily removed by mechanical abrasion than the removal of Si phase itself. The newly developed wheel was able to produce a similar surface integrity to that obtained from chemical mechanical polishing (CMP), i.e., the CMG achieved a surface roughness of 0.5 nm in R a and a subsurface damage layer of 13 nm thick. The CMG process developed thus has great potential for back grinding or thinning of silicon wafers in order to replace CMP.

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Grinding of silicon wafers: A review from historical perspectives

Cited by 159 publications

References 32 publications

A review on ductile mode cutting of brittle materials

A review on ductile mode cutting of brittle materials

New materials and advances in making electronic skin for interactive robots

Surface integrity and removal mechanism of chemical mechanical grinding of silicon wafers using a newly developed wheel

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