Ground Plane influence on UTBB SOI nMOSFET analog parameters

Itocazu, Vitor T.; Sonnenberg, Victor; Simoen, Eddy; Claeys, Cor; Martino, João Antônio

doi:10.1109/sbmicro.2015.7298114

Cited by 3 publications

(4 citation statements)

References 13 publications

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“…Device with t Si = 6 nm + High-κ (HK / t Si =6) presents the lower percentage difference comparing devices with and without GP, as shown in Table V. In all cases, devices without GP present better results, due to the lower drain electrical field penetration, in agreement with the tendency observed in [13].…”

Section: A Ground Plane Influence Varying the Back Gate Voltagesupporting

confidence: 82%

“…The difference between gm S AT of devices without GP and with GP, shown in figure 8, is related with the strong coupling (supercoupling) between front and back interfaces [13] as mentioned in the previous section. However, in devices with L=70 nm, the influence of the drain electrical field penetration is higher than the supercoupling between front and back interfaces.…”

Section: A Ground Plane Influence Varying the Back Gate Voltagementioning

confidence: 68%

“…Figure 6 shows the electric potential along the device length (BB' cutline in figure 1), 3 nm from the front interface (in the middle of the channel) for devices SiO 2 / t Si = 6 with and without GP [13].…”

Section: A Ground Plane Influence Varying the Back Gate Voltagementioning

confidence: 99%

“…Moreover, the presence of a GP on the Dynamic Threshold operation mode was studied and modeled in [9][10][11]. The analog performance was reported in [12] where the GP influence was studied for the analog figures of merit and in [13][14] where an initial study of the same devices presented in this paper was done. This paper presents a detailed analysis of the silicon film thickness, the gate dielectric material and GP influence on the main analog parameters like transconductance in saturation regime (gm S AT ), output conductance (g D ), intrinsic voltage gain (A V ) and Early voltage (V EA ) of UTBB SOI nMOSFETs.…”

Section: Introductionmentioning

confidence: 99%

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Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies

Itocazu¹,

Sonnenberg²,

Martino³

et al. 2020

JICS

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This paper presents an analysis of the silicon film thickness (6 nm and 14 nm), the gate dielectric material (SiO2 and High- κ material) and the Ground Plane influence on the analog parameters of Ultra Thin Body and Buried Oxide (UTBB) SOl nMOSFET devices, based on experimental and simulation results. Two channel lengths (70 nm and 1μm) have been considered and the analog performance has been analyzed as a function of the back gate bias. It is shown that at zero back gate bias , the presence of a Ground Plane improves the transconductance in the saturation region due to the strong coupling between front and back gates in devices with a long channel (1 μm), thin silicon film (6 nm) and SiO2 as gate dielectric material. However, for the intrinsic voltage gain, output conductance and Early Voltage, the devices without Ground Plane present better results due to the higher drain electrical field penetration. Short-channel transistors (70 nm) with Ground Plane show an improvement of the analog parameters also due to the high drain electrical field penetration. Similar behavior is noticed in devices with a thicker silicon film (14nm). UTBB nMOSFETs with High- κ material present less influence of a Ground Plane on the parameters analyzed. Varying the back gate bias in devices with long channel (1 μm) and SiO2 as gate dielectric material, the analog parameters present better results in devices without Ground Plane, except for the transconductance in long channel transistors with a thin silicon film, for the reason explained before (strong coupling between front and back gates). Devices with High-κ material as gate dielectric show a minor improvement of the analog performance with a Ground Plane.

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Section: A Ground Plane Influence Varying the Back Gate Voltagesupporting

confidence: 82%

Section: A Ground Plane Influence Varying the Back Gate Voltagementioning

confidence: 68%

Section: A Ground Plane Influence Varying the Back Gate Voltagementioning

confidence: 99%