Group-III-Nitride Based Gas Sensing Devices

Schalwig, J.; Müller, Gerhard; Ambacher, O.; Stutzmann, M.

doi:10.1002/1521-396x(200105)185:1<39::aid-pssa39>3.0.co;2-g

Cited by 147 publications

(30 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this latter mode of operation UV photo-activation has also been shown to be effective [8,9,10,11,12,13]. A second group of materials that exhibits a similar kind of low-temperature response, is III-nitride materials both in the form of AlGaN/GaN high electron mobility transistors (HEMT) with flat surface morphologies [14,15,16,17,18,19] as well as in the form of GaN/InGaN nanowire heterostructures [20,21,22]. These effects can be attributed to the fact that III-nitride surfaces tend to develop surface oxides when exposed to ambient air which makes them similar to conventional MOx materials [23,24,25,26,27,28].…”

Section: Introductionmentioning

confidence: 99%

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

et al. 2015

View full text Add to dashboard Cite

In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Lechuga et al [9] used GaAs for field-effect Schottky diode devices, Zhu et al. Schalwig et al [11] have demonstrated gas sensitive Pt-GaN Schottky diodes and HEMT devices based on GaN/AlGaN. Schalwig et al [11] have demonstrated gas sensitive Pt-GaN Schottky diodes and HEMT devices based on GaN/AlGaN.…”

Section: Introductionmentioning

confidence: 99%

SiC Based Field Effect Gas Sensors for Industrial Applications

Spetz

Unéus

Svenningstorp

et al. 2001

phys. stat. sol. (a)

View full text Add to dashboard Cite

The development and field-testing of high-temperature sensors based on silicon carbide devices have shown promising results in several application areas. Silicon carbide based field-effect sensors can be operated over a large temperature range, 100-600 C, and since silicon carbide is a chemically very inert material these sensors can be used in environments like exhaust gases and flue gases from boilers. The sensors respond to reducing gases like hydrogen, hydrocarbons and carbon monoxide. The use of different temperatures, different catalytic metals and different structures of the gate metal gives selectivity to different gases and arrays of sensors can be used to identify and monitor several components in gas mixtures. MOSFET sensors based on SiC combine the advantage of simple circuitry with a thicker insulator, which increases the long term stability of the devices. In this paper we describe silicon carbide MOSFET sensors and their performance and give examples of industrial applications such as monitoring of car exhausts and flue gases. Chemometric methods have been used for the evaluation of the data. phys. stat. sol. (a) 185, No. 1, 15-25 (2001)

show abstract

“…[17][18][19][20][21][22][23][24][25][26][27][28][29][30] There are positive counter charges at the HEMT surface layer induced by the electrons located at the AlGaN / GaN interface. Any slight changes in the ambient can affect the surface charge of the HEMT, thus changing the electron concentration in the channel at AlGaN / GaN interface.…”

mentioning

confidence: 99%

Botulinum toxin detection using AlGaN∕GaN high electron mobility transistors

Wang

Chu

Chen

et al. 2008

Applied Physics Letters

View full text Add to dashboard Cite

Antibody-functionalized, Au-gated AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN∕GaN HEMT drain-source current showed a rapid response of less than 5s when the target toxin in a buffer was added to the antibody-immobilized surface. We could detect a range of concentrations from 1to10ng∕ml. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN∕GaN HEMTs for botulinum toxin detection.

show abstract

Group-III-Nitride Based Gas Sensing Devices

Cited by 147 publications

References 10 publications

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

SiC Based Field Effect Gas Sensors for Industrial Applications

Botulinum toxin detection using AlGaN∕GaN high electron mobility transistors

Contact Info

Product

Resources

About