Group-IV-diluted magnetic semiconductor FexSi1−x thin films grown by molecular beam epitaxy

Structural and magnetic properties of single dopants of Mn and Fe for Si-based spintronic materials

“…We also independently optimized the lattice constant for each model. We show later that it enables us to understand the experimental result in [5] because the experiment measures the change in lattice constant under alloying. This data is shown in the last column.…”

“…Since the calculated relaxed bond lengths at an S site and an I site for Fe show opposite character regardless of supercell size, it can be used to identify the sites of the Fe doped in Si. In [5] with 4.0% doping of Fe, the lattice constant expends by 0.3%. We suggest that majority of the Fe in the alloy occupies interstitial sites.…”

“…In particular, there were interesting experiments [2][3][4] measuring the transport and magnetic properties of Mn x Si 1−x grown by post thermal treatment of amorphous Mn-Si films, ion implantation, and arc-melting methods. In addition, the growth of Fe in Si has also been carried out by Su et al [5] who used the molecular beam epitaxial method to successfully grow film forms of Fe x Si 1−x with x at 4.0 and 7.0%, respectively.…”

Formation of Mn-germanide nanodots on ultrathin SiO2induced by remote hydrogen plasma

“…Group-IV semiconductors can be functionalized as dilute magnetic semiconductors when doped with magnetic elements. [1][2][3][4][5][6][7][8] Therefore, group-IV dilute magnetic semiconductors have the advantage of using both the spin and electron charge degrees of freedom, which enables us to develop novel functional spintronic devices. The application of group-IV based metallic nanodots (NDs) such as silicide and germanide NDs, to a floating gate in MOS memories has been attracting much attention as charge retention characteristics can be improved and there can be compatibility with Si-based semiconductor devices.…”