Group IV mid-infrared photonics [Invited]

Mashanovich, Goran Z.; Nedeljkovic, Milos; Penadés, Jordi Soler; Qu, Zhibo; Cao, Wei; Osman, A. M.; Wu, Yangbo; Stirling, Callum J.; Yanli, Qi; Yu, Chongxiu; Reid, Lauren; Littlejohns, Callum G.; Kang, Jian; Zhao, Ziqiang; Takenaka, Mitsuru; Li, Tingting; Zhou, Zhen; Gardes, Frederic Y.; Thomson, David J.; Reed, Graham T.

doi:10.1364/ome.8.002276

Cited by 39 publications

(16 citation statements)

References 51 publications

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“…However, due to the limited photonic functionality of Si, there is currently an increasing impetus toward incorporating other group IV semiconductors, such as Ge and Sn, within these systems to modify, enhance, and/or expand the optical and electrical characteristics. [74][75][76] Similar to the fiber materials, many of the fabrication methods applied to produce multimaterial, multifunctional integrated planar systems require postprocessing thermal treatments to improve the quality and thus performance of the system. Although furnace treatments, such as rapid thermal processing (RTP), are the most widely used approach, these cannot be applied locally to individual components, and they also lack the precision needed to fine-tune the operating characteristics of devices.…”

Section: Laser-processed Planar Photonic Devicesmentioning

confidence: 99%

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Aktaş

Peacock

2021

Advanced Photonics Research

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In the quest to expand the functionality and capacity of group IV semiconductor photonic systems, new materials and production methods are constantly being explored. In particular, flexible fabrication and postprocessing approaches that are compatible with different materials and allow for tuning of the components and systems are of great interest. Within this research area, laser thermal processing has emerged as an indispensable tool that can be applied to enhance and/or modify the material, structural, electrical and optical properties of group IV elemental and compound semiconductors at various stages of the production process. Herein, the recent progress made in the application of laser processing techniques to develop integrated semiconductor systems in both fiber‐ and planar‐based platforms is evaluated. Laser processing has allowed for the production of semiconductor waveguides with high crystallinity in the core and low optical losses, as well as postfabrication trimming of device characteristics and direct writing of tunable strain and composition profiles for bandgap engineering and optical waveguiding. For each platform, the current challenges and opportunities for the future development of laser‐processed integrated semiconductor photonic systems are presented.

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Section: Laser-processed Planar Photonic Devicesmentioning

confidence: 99%

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Aktaş

Peacock

2021

Advanced Photonics Research

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“…The detector has room temperature responsivity of 0.13 A/W at a wavelength of 2.75 μm for 1.5 V bias voltage 138 . Another report has demonstrated a graphene photodetector based on coplanar integration method with SOI waveguide and achieved 2.2 mA/W responsivity at 3.8 μm under −1 V bias voltage 139 . While most photonic devices using graphene materials are fabricated by a hybrid transfer process, which relies on delamination and attachment of these atomically thin crystals onto prefabricated photonic devices, Lin et al in 2017, 117 demonstrated that a ChG platform can also be utilized to enable direct photonic integration on graphene without disrupting its structure and optoelectronic properties.…”

Section: Candidate Materials For Mid‐ir Waveguide Integrated Detectorsmentioning

confidence: 99%

Integrated photonic materials for the mid‐infrared

Yadav

Agarwal

2020

Int J of Appl Glass Sci

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While silicon photonic integrated circuits for the near-infrared (IR) telecommunication band have attracted great research interest in the past decade, recent advances offer opportunities to extend the operational wavelength to the mid-IR (2.5-20 μm) for free space communications, sensing, environmental monitoring and much more.In this study, we will comprehensively review the current status of materials available for mid-IR waveguides and waveguide integrated photodetectors, with a few application oriented examples to illustrate the technological importance and significant growth opportunity for integrated photonics in the mid-IR regime. However, this wavelength regime also presents new material design and fabrication challenges.Therefore, we will discuss the critical issues prior to commercialization and will briefly summarize the outlook on future research topics along with opportunities.

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“…These features enable the exploitation of a wider wavelength range in the MIR, as well as the development of small-footprint and high efficiency nonlinear devices. Since 2012 several photonic devices for the MIR have been demonstrated using germanium-based platforms, including Germanium-on-Silicon (GOS) waveguides, demonstrating a propagation loss of 2.5 dB/cm at 7.58 µm [21] and less than 10 dB/cm at wavelengths as long as 11.25 µm [22], and other passive devices [23], germanium-on-SOI waveguides [24], germanium-on-Si 3 N 4 waveguides [25], germanium-on-insulator (GOI) waveguides [26,27], SiGe/Si waveguides [28][29][30] and suspended germanium devices [13,14,31,32] at wavelengths up to 3.8 µm.…”

Section: Germanium Is a Materials Of High Interest For Midinfrared (Mimentioning

confidence: 99%