Group-IV monochalcogenides GeS, GeSe, SnS, SnSe

Titova, Lyubov V.; Fregoso, Benjamin M.; Grimm, Ronald L.

doi:10.1016/b978-0-08-102687-8.00007-5

Cited by 15 publications

(6 citation statements)

References 158 publications

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“…5,6 The reduced symmetry manifests several unique properties, including piezoelectricity, pyroelectricity, and second harmonic generation. 5,[7][8][9][10] Monolayer SnSe is predicted to possess a d 11 piezoelectric coefficient of 74.73 pm V −1 ; an order of magnitude greater than currently established two dimensional (2D) materials like MoS 2 (d 11 = 3.7 pm V −1 ). 11 Piezoelectric measurements on 35 nm thick SnSe films have shown a d 11 coefficient of 19.9 pm V −1 despite not having a compatible symmetry for piezoelectricity.…”

Section: Introductionmentioning

confidence: 91%

“…However, unlike common 2D piezoelectric films like MoS 2 and graphene, SnSe possesses relatively strong interlayer forces, rendering it difficult to isolate a monolayer. 5,7,9,16 Density functional theory (DFT) calculations indicate interlayer binding energies reach 146 meV per atom in SnSe compared to only 24 meV per atom for graphite. 17 The lone pair electrons on Sn are thought to contribute to the enhanced interlayer bonding.…”

Section: Introductionmentioning

confidence: 99%

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Self-limiting stoichiometry in SnSe thin films

et al. 2023

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Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Self-limiting stoichiometry in SnSe thin films

et al. 2023

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“…1,2). Considering a colloidal particle as a fractal cluster (fractal agglomerate), the fractal geometry methods can be applied to describe the thin film microstructure [6][7][8][9][10][11][12][13][14][15][16]. Any fractal cluster as a geometric system is formed as a result of the association (adhesion) of solid particles, and the conditions of association affect the way of cluster growth [12].…”

Section: Resultsmentioning

confidence: 99%

Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films

Kozhevnikova,

Maskaeva,

Enyashin

et al. 2023

Nanosystems: Phys. Chem. Math.

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Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles' agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. KEYWORDS tin(II) sulfide, thin films, chemical bath deposition, p-type conductivity, quantum-chemical calculations, formation mechanism ACKNOWLEDGEMENTS This work was carried out in accordance with the scientific and research plans and state assignment of the ISSC UB RAS and Ural Federal University Program of Development within the Priority-2030 Program (Ministry of Science and Higher Education of the Russian Federation).

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“…With orthorhombic structures, group IV monochalcogenides compounds MX (M = Ge, Sn and X = S, Se) have been extensively studied for their exceptional thermoelectric properties for decades. Now as a type of 2D vdWs material, they have regained extensive research interest [56–58] . Orthorhombic MX compounds exhibit a puckered layer structure similar to that of BP (see Fig.…”

Section: Optical Properties Of Low Symmetry 2d Materialsmentioning

confidence: 99%

Optical properties and polaritons of low symmetry 2D materials

et al. 2023

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Low symmetry 2D materials with intrinsic in-plane anisotropic optical properties and high tunability provide a promising platform to explore and manipulate light-matter interactions. To date, dozens of in-plane anisotropic 2D materials with diverse band structures have been discovered. They exhibit rich optical properties, indicating great potential for novel applications in optics, photonics, and optoelectronics. In this paper, we thoroughly review the anisotropic optical properties and polaritons in many kinds of low symmetry 2D materials, aiming to elicit more research interest in this field. First, the optical properties of anisotropic 2D semiconductors, including interband absorption, photoluminescence, excitons, and band structure engineering for tuning optical responses, are introduced. Then fundamentals and advances in experiments of hyperbolic polaritons in anisotropic 2D materials, including phonon, plasmon, and exciton polaritons, are discussed. Finally, a perspective on promising research directions is given.

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Group-IV monochalcogenides GeS, GeSe, SnS, SnSe

Cited by 15 publications

References 158 publications

Self-limiting stoichiometry in SnSe thin films

Self-limiting stoichiometry in SnSe thin films

Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films

Optical properties and polaritons of low symmetry 2D materials

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