1998
DOI: 10.1088/0022-3727/31/20/001
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Growth and applications of Group III-nitrides

Abstract: Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam e… Show more

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Cited by 1,422 publications
(884 citation statements)
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“…MAX phases in general have previously been synthesized as thin films using physical vapour deposition (PVD) methods such as magnetron sputtering [6] and cathodic arc [7], with process temperatures considerably lower than those of bulk synthesis. Although Ga is a very important element for semiconductor applications, thin film synthesis of related compounds is usually performed by chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) [8,9], due to challenges associated with the liquid state of Ga (melting point 30 ºC) during commonly employed PVD synthesis conditions. Only a few groups have successfully demonstrated use of liquid Ga sputtering targets for epitaxial growth of GaN [10,11].…”
mentioning
confidence: 99%
“…MAX phases in general have previously been synthesized as thin films using physical vapour deposition (PVD) methods such as magnetron sputtering [6] and cathodic arc [7], with process temperatures considerably lower than those of bulk synthesis. Although Ga is a very important element for semiconductor applications, thin film synthesis of related compounds is usually performed by chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) [8,9], due to challenges associated with the liquid state of Ga (melting point 30 ºC) during commonly employed PVD synthesis conditions. Only a few groups have successfully demonstrated use of liquid Ga sputtering targets for epitaxial growth of GaN [10,11].…”
mentioning
confidence: 99%
“…Gallium nitride is a wide band gap (~3.4 eV) semiconductor that is used in optoelectronic devices such as light emitting diodes and lasers with emission in the blue to ultraviolet wavelength region [1,2]. Gallium nitride nanowires are promising for use in a wide range of optical and electronic devices, including UV lasers, field effect transistors, and logic devices [35].…”
Section: Introductionmentioning
confidence: 99%
“…Aluminum nitride (AlN), as one of the III-V nitride-based semiconductors, owns unique physical properties such as wide band gap, high thermal conductivity (0.823-2.0 Wcm −1 K −1 ) and good mechanical strength [8,9]. Recently, AlN nanomaterials are of fresh interests due to their high surface area, low dimensionality and dramatically improved performance for many applications, such as in the field-emission and light-emitting nanodevices [10,11].…”
Section: Introductionmentioning
confidence: 99%