Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs

Regolin, I.; Sudfeld, D.; Lüttjohann, Stephan; Khorenko, V.; Prost, W.; Kästner, J.; Dumpich, G.; Meier, Cedrik; Lorke, Axel; Tegude, F.-J.

doi:10.1016/j.jcrysgro.2006.10.122

Cited by 45 publications

(39 citation statements)

References 10 publications

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“…An unintentional NW shell can harm device functionality by short circuiting axially designed components and by becoming a surrounding and competing recombination center [7] for charge carriers. Only by taking full control over radial growth can NWs be part of the future architecture for electronic devices.…”

Section: Introductionmentioning

confidence: 99%

In situ etching for total control over axial and radial nanowire growth

et al. 2010

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We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.

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Section: Introductionmentioning

confidence: 99%

In situ etching for total control over axial and radial nanowire growth

et al. 2010

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“…The downscaling in the size of crystals that can be synthesized further opens the door to the development of devices that were not possible in two-dimensional (2D) epitaxial growth, such as highly mismatched heterostructures incorporated in the NWs [4,5]. Moreover, monolithic integration of III-V structures on group IV substrates [6,7] now becomes a viable path not only for performance enhancement of existing devices, but also incorporation of new functionalities.…”

Section: Introductionmentioning

confidence: 99%

Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure

Plante

LaPierre

2008

Journal of Crystal Growth

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“…The MOVPE growth of (InGa)As NW on GaAs substrate has been investigated to get information about the growth determining effects [2] and the (InGa)As composition with specific precursor supply [3]. Furthermore, structural and optical properties of GaAs/ (InGa)As/GaAs axial double-heterostructure NW have been studied [3,4]. Frequently, heterostructure growth is accompanied by characteristic phenomena like kinking, increased twin density, the formation of diffuse heterojunctions with alloy crystal gradients instead of abrupt interfaces [3,5], and growth along a side facet of the already grown NW [6,7].…”

Section: Introductionmentioning

confidence: 99%