Growth and characteristics of HgGaInS₄ single crystals

Abstract

Single crystals of the HgGaInS, layered compound were grown by the iodine transport technique. Results of their optical, photoelectric, and radiative properties' study are presented. The band gap and the binding energy of holes on the sensitizing centres were determined to be E, = 2.41 eV and E. = 0.2eV, respectively. A presence of quasi-continuously distributed states was stated which are responsible for the exponential segment of the absorption edge and which take part in the radiative recombination. Bupawem MOHOKPHCTaTUIbI CnoHCTOrO coemeHHa H,GaInS, MeTOnOM XEIMIIgeCKRX TpaHc-IIOPTHX peaKuuii B ~~M K H Y T O~~iiorptwoii clicTeMe. IIpmeneHu pe3ynwam rrccnenosamia HX OnTHqecKm, + o~o m e~~p w e c~~x H ~3 n y q a~e m~~~ CBOECTB. OnpeneneHa mipma s a n p e q e~~o i i 30m E , = 2,413B, H 31iepr~x C B R~H WPOK Ha o9yBcrBnrwm qempax E, = 0,2 3B. YcraHoBneao rianHwe B sanpewe~~oii 3 o~e Ksa3menpepbmio pacnpeneneRwrx COCTOXH&, xoiopue 06ycno~m-m n y q a~e m~o i i pe~o~6rma~1.mi.BaWT IIpOTXXeHHLdi 3KClIOHeHuHaJIbHL& Y'iaclOK Kpaff IIOrJIO~eHHn li IIpHHHMaIoT paCTHe B

OPTICAL PROPERTIES OF HgGaInS4 CRYSTALS

“…Initial results on the absorption and photoluminescence of HgGaInS4 crystals have been previously investigated [2]. The energy gap of HgGaInS4 is equal to 2.41 eV at temperature 300 K and 2.46 eV at 80 K [2].…”

“…Initial results on the absorption and photoluminescence of HgGaInS4 crystals have been previously investigated [2]. The energy gap of HgGaInS4 is equal to 2.41 eV at temperature 300 K and 2.46 eV at 80 K [2]. It was also noted that the exponential tail of the absorption edge is caused by the existence of states that are distributed quasi-continuously [15].…”

“…The hexagonal lattice of HgGaInS4 crystals has unit cell parameters (lengths of the cell edges) of a = b = 0.39 nm and c = 3.14 nm [1]. HgGaInS 4 crystals exhibit similar chemical, crystalline and electrophysical properties compared to ZnIn2S4, CdGaInS4, CdIn2S2Se2 crystals [2].…”