Growth and Characteristics of High-quality InN by Plasma- Assisted Molecular Beam Epitaxy

Yang, Chen-Chi; Lo, Ikai; Shih, Chia-Lung; Hu, Ying‐Chieh Wang Chia-Hsuan; Lin, Yu-Wei; Tsai, Chin-Hsien; Huang, Mitch M. C. Chou Hui‐Chun; Yu, C. H.; Jang, Der-Jun

doi:10.5772/65812

Cited by 2 publications

(1 citation statement)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Up to now, various advanced epitaxy deposition techniques have been employed to synthesise InN, including molecular beam epitaxy (MBE), metalorganic chemical vapour deposition (MOCVD), hydride vapour phase epitaxy, plasma-assisted reactive evaporation and reactive sputtering [8][9][10]. MOCVD is advantageous in producing large-area deposition, excellent composition control and film uniformity; however, the major problem with this method is the lack of availability of suitable precursors with sufficient volatility and stability.…”

Section: Introductionmentioning

confidence: 99%

Effects of coating cycles on spin-coated indium nitride thin films

Lee

Yam

et al. 2018

Surface Engineering

View full text Add to dashboard Cite

Indium nitride (InN) thin films were prepared on aluminium nitride/p-silicon (111) substrates via sol-gel spin coating followed by nitridation. The InN thin films deposited at different coating cycles (10, 20 and 30) were analysed, and the growth mechanism was discussed in depth. The film thickness was enhanced with increasing number of coating cycle. X-ray diffraction showed that the crystalline structure of InN was improved at 20 coating cycles and started to degrade at 30 cycles. The diffusion path of the active nitrogen atoms into the deeper film was limited by the low growth temperature and led to gradual surface saturation. The film deposited at 20 cycles showed densely packed InN grains. Through the proposed approach, an InN optical band gap of 1.71 eV was achieved. It can be deduced that the variation in the number of coating cycles has significantly affected the film properties.

show abstract

Section: Introductionmentioning

confidence: 99%